ALD210800PCL

Advanced Linear Devices
585-ALD210800PCL
ALD210800PCL

制造商:

说明:
MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY

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供货情况

库存:
无库存
生产周期:
最少: 50   倍数: 50
单价:
¥-.--
总价:
¥-.--
预估关税:
此产品免运费

定价 (含13% 增值税)

数量 单价
总价
¥65.7434 ¥3,287.17
¥54.805 ¥5,480.50
¥48.816 ¥24,408.00
¥45.6859 ¥45,685.90

产品属性 属性值 选择属性
Advanced Linear Devices
产品种类: MOSFET
RoHS:  
Si
Through Hole
PDIP-16
N-Channel
4 Channel
10.6 V
80 mA
25 Ohms
- 12 V, 12 V
20 mV
0 C
+ 70 C
500 mW
Enhancement
Tube
商标: Advanced Linear Devices
配置: Quad
组装国: Not Available
扩散国家: Not Available
原产国: US
产品类型: MOSFETs
系列: ALD210800P
工厂包装数量: 50
子类别: Transistors
晶体管类型: 4 N-Channel
典型关闭延迟时间: 10 ns
典型接通延迟时间: 10 ns
单位重量: 1.025 g
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已选择的属性: 0

CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
8541210101
KRHTS:
8541219000
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

Advanced Linear Devices ALD210800/ALD210800A Precision N-Channel EPAD® MOSFET Arrays - INACTIVE

Advanced Linear Devices ALD210800/ALD210800A Precision N-Channel EPAD® MOSFET Arrays are precision matched at the factory using ALD's proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110800A/ALD110800 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD210800/ALD210800A features Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels.
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