AS4C1M16S-7TCN

Alliance Memory
913-AS4C1M16S-7TCN
AS4C1M16S-7TCN

制造商:

说明:
动态随机存取存储器 S动态随机存取存储器, 16Mb, 1M x 16, 3.3V, 50pin TSOP II, 143 MHz, Commercial Temp - Tray

ECAD模型:
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供货情况

库存:
0

您可以延期订购此产品。

生产周期:
12 周 预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥28.4534 ¥28.45
¥26.555 ¥265.55
¥25.8092 ¥645.23
¥25.2329 ¥1,261.65
¥24.4871 ¥2,864.99
¥22.5774 ¥5,283.11
¥22.2497 ¥13,016.07
¥21.5039 ¥22,643.61
¥20.4304 ¥52,587.85

产品属性 属性值 选择属性
Alliance Memory
产品种类: 动态随机存取存储器
RoHS:  
SDRAM
16 Mbit
16 bit
143 MHz
TSOP-II-50
1 M x 16
5.4 ns
3 V
3.6 V
0 C
+ 70 C
AS4C1M16S-7
Tray
商标: Alliance Memory
组装国: Not Available
扩散国家: Not Available
原产国: TW, CN
湿度敏感性: Yes
安装风格: SMD/SMT
产品类型: DRAM
工厂包装数量: 117
子类别: Memory & Data Storage
电源电流—最大值: 70 mA
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已选择的属性: 0

CNHTS:
8542329000
USHTS:
8542320002
JPHTS:
854232021
KRHTS:
8542321010
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.