AS4C256M16D3LC-10BIN

Alliance Memory
913-4C256M16D3L10BIN
AS4C256M16D3LC-10BIN

制造商:

说明:
动态随机存取存储器 DDR3, 4G, 256M X 16, 1.35V, 96-BALL FBGA, 933MHZ, Industrial Temp - Tray

ECAD模型:
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库存量: 284

库存:
284 可立即发货
生产周期:
16 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥203.40 ¥203.40
¥188.258 ¥1,882.58
¥182.2238 ¥4,555.60
¥177.7603 ¥8,888.02
¥170.1441 ¥17,014.41
¥168.0762 ¥35,127.93
¥166.675 ¥69,670.15
1,045 报价

产品属性 属性值 选择属性
Alliance Memory
产品种类: 动态随机存取存储器
RoHS:  
SDRAM - DDR3L
4 Gbit
16 bit
933 MHz
FBGA-96
256 M x 16
20 ns
1.283 V
1.45 V
- 40 C
+ 95 C
Tray
商标: Alliance Memory
组装国: Not Available
扩散国家: Not Available
原产国: TW, CN
湿度敏感性: Yes
安装风格: SMD/SMT
产品类型: DRAM
工厂包装数量: 209
子类别: Memory & Data Storage
电源电流—最大值: 84 mA
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已选择的属性: 0

CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.