IS67WVH16M8DBLL-166B1LA2

ISSI
870-16M8DBLL166B1LA2
IS67WVH16M8DBLL-166B1LA2

制造商:

说明:
静态随机存取存储器 128Mb, HyperRAM, 16Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS, Automotive

寿命周期:
新产品:
此制造商的新产品。
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库存量: 364

库存:
364 可立即发货
生产周期:
14 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1   最多: 200
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥66.0937 ¥66.09
¥61.5398 ¥615.40
¥59.6414 ¥1,491.04
¥58.2289 ¥2,911.45
¥56.8277 ¥5,682.77

产品属性 属性值 选择属性
ISSI
产品种类: 静态随机存取存储器
RoHS:  
128 Mb
16 M x 8
35 ns
166 MHz
3.6 V
2.7 V
- 40 C
+ 105 C
SMD/SMT
TFBGA-24
商标: ISSI
组装国: Not Available
扩散国家: Not Available
原产国: TW
数据速率: 400 MB/s
存储类型: PSRAM
湿度敏感性: Yes
产品类型: SRAM
工厂包装数量: 480
子类别: Memory & Data Storage
类型: Pseudo Static Random Access Memory
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已选择的属性: 0

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CNHTS:
8542329010
CAHTS:
8542320030
USHTS:
8542320041
TARIC:
8542324500
MXHTS:
8542320299
ECCN:
EAR99

IS67WVH/IS67WVO Memory Devices

ISSI IS67WVH/IS67WVO Memory Devices contain 64Mb/128Mb Pseudo Static Random Access (PSRAM) memory using a self-refresh DRAM array organized as 8M/16M words by 8bits. These memory devices offer up to 400MB/s of high-performance. The IS67WVH HyperRAM™ devices support a HyperBus interface, very low signal count (address, command, and data through 8 DQ pins), and hidden refresh operation. These integrated memory devices feature sequential burst transactions, Read-Write Data Strobe (RWDS), and Double Data Rate (DDR). The IS67WVO memory devices support an Octal Peripheral Interface (OPI) (address, command, and data through 8 SIO pins), very low signal count, and hidden refresh operation. These memory devices are ideal for automotive applications.