IXFK240N15T2

IXYS
747-IXFK240N15T2
IXFK240N15T2

制造商:

说明:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET

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库存量: 1

库存:
1
可立即发货
在途量:
300
生产周期:
24
大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥186.6873 ¥186.69
¥121.6784 ¥1,216.78
¥109.7682 ¥10,976.82

产品属性 属性值 选择属性
IXYS
产品种类: MOSFET
RoHS:  
Si
Through Hole
TO-264-3
N-Channel
1 Channel
150 V
240 A
5.2 mOhms
- 20 V, 20 V
2.5 V
460 nC
- 55 C
+ 175 C
1.25 mW
Enhancement
HiPerFET
Tube
商标: IXYS
配置: Single
组装国: Not Available
扩散国家: Not Available
原产国: PH
下降时间: 145 ns
正向跨导 - 最小值: 125 S
产品类型: MOSFETs
上升时间: 125 ns
系列: IXFK240N15
工厂包装数量: 25
子类别: Transistors
晶体管类型: 1 N-Channel
典型关闭延迟时间: 77 ns
典型接通延迟时间: 48 ns
单位重量: 10 g
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CNHTS:
8541210000
TARIC:
8541290000
USHTS:
8541290065
MXHTS:
85412999
BRHTS:
85415020
ECCN:
EAR99

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Gen2 Trench Gate Power MOSFETs

IXYS Gen2 Trench Gate Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A  (TC=@25°C). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These IXYS devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.