Name: IXYS IXFX150N30P3
Brand: IXYS
SKU: 747-IXFX150N30P3
Price: 166.46 RMB
Availability: InStock

说明：

MOSFET N-Channel: Power MOSFET w/Fast Diode

ECAD模型:

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定价 (含13% 增值税)

数量	单价	总价
	¥188.0998	¥188.10
	¥127.6335	¥1,276.34

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产品属性	属性值	选择属性
制造商:	IXYS
产品种类:	MOSFET
RoHS:
技术:	Si
安装风格:	Through Hole
封装 / 箱体:	TO-247-3
晶体管极性:	N-Channel
通道数量:	1 Channel
Vds-漏源极击穿电压:	300 V
Id-连续漏极电流:	150 A
Rds On-漏源导通电阻:	19 mOhms
Vgs - 栅极-源极电压:	- 20 V, 20 V
Vgs th-栅源极阈值电压:	3 V
Qg-栅极电荷:	197 nC
最小工作温度:	- 55 C
最大工作温度:	+ 150 C
Pd-功率耗散:	1.3 mW
通道模式:	Enhancement
商标名:	HiPerFET
封装:	Tube
商标:	IXYS
配置:	Single
组装国:	Not Available
扩散国家:	Not Available
原产国:	KR
产品类型:	MOSFETs
系列:	IXFX150N30
工厂包装数量:	30
子类别:	Transistors
晶体管类型:	1 N-Channel
单位重量:	6 g

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数据表

IXFX150N30P3 数据表

此功能要求启用JavaScript。

CNHTS:: 8541210000
CAHTS:: 8541900000
USHTS:: 8541290065
JPHTS:: 8542900006
TARIC:: 8541900000
MXHTS:: 8541900299
ECCN:: EAR99

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HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Q_g and R_DS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (R_dson), a 14 percent reduction in gate charge (Q_g) and as high as a 20 percent increase in maximum power dissipation (P_d). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.