IXTP300N04T2

IXYS
747-IXTP300N04T2
IXTP300N04T2

制造商:

说明:
MOSFET 300 Amps 40V

ECAD模型:
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库存量: 297

库存:
297 可立即发货
生产周期:
31 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥58.8165 ¥58.82
¥33.6627 ¥336.63
¥30.849 ¥3,084.90
¥30.3518 ¥15,175.90

产品属性 属性值 选择属性
IXYS
产品种类: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
40 V
300 A
2.5 mOhms
- 20 V, 20 V
4 V
145 nC
- 55 C
+ 175 C
480 W
Enhancement
HiPerFET
Tube
商标: IXYS
配置: Single
组装国: Not Available
扩散国家: Not Available
原产国: KR
下降时间: 13 ns
正向跨导 - 最小值: 55 S
产品类型: MOSFETs
上升时间: 17 ns
系列: IXTP300N04
工厂包装数量: 50
子类别: Transistors
晶体管类型: 1 N-Channel
典型关闭延迟时间: 32 ns
典型接通延迟时间: 22 ns
单位重量: 2 g
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CNHTS:
8541290000
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Gen2 Trench Gate Power MOSFETs

IXYS Gen2 Trench Gate Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A  (TC=@25°C). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These IXYS devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost.

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HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.