IR2128SPBF
图像仅供参考
请参阅产品规格
请参阅产品规格
942-IR2128SPBF
IR2128SPBF
制造商：
说明：
栅极驱动器 1 HI SIDE DRVR INVERTING INPUT
栅极驱动器 1 HI SIDE DRVR INVERTING INPUT
数据表:
库存量: 3,668
-
库存：
-
3,668 可立即发货出现意外错误。请稍候重试。
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生产周期：
-
24 周 大于所示数量的预计工厂生产时间。
定价 (含13% 增值税)
| 数量 | 单价 |
总价
|
|---|---|---|
| ¥23.5379 | ¥23.54 | |
| ¥17.5489 | ¥175.49 | |
| ¥14.4188 | ¥360.47 | |
| ¥13.8086 | ¥1,380.86 | |
| ¥13.4583 | ¥3,364.58 | |
| ¥13.0289 | ¥6,514.45 | |
| ¥11.8085 | ¥11,808.50 | |
| ¥10.9384 | ¥27,346.00 | |
| ¥10.8593 | ¥41,265.34 |
备用包装
数据表
Application Notes
- Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs (PDF)
- HV Floating MOS Gate Drivers (PDF)
- IRS212(7,8,71) and IR212(7,8,71) Comparison (PDF)
- Understanding HVIC Datasheet Specifications (PDF)
- Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs (PDF)
- Using the Current Sensing IR212x Gate Driver ICs (PDF)
Product Catalogs
Technical Resources
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- Low Gate Charge HEXFETS simplify Gate Drive and Lower Cost (PDF)
- Managing Transients in Control IC Driven Power Stages (PDF)
- PWM Control Methods Increases Efficiency and Reliability; Extends Battery Charge-cycle Time (PDF)
- Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTs (PDF)
- CNHTS:
- 8542399000
- CAHTS:
- 8542310000
- USHTS:
- 8542310075
- KRHTS:
- 8542311000
- TARIC:
- 8542319000
- MXHTS:
- 8542310302
- ECCN:
- EAR99
