IR2130SPBF
图像仅供参考
请参阅产品规格
请参阅产品规格
942-IR2130SPBF
IR2130SPBF
制造商：
说明：
栅极驱动器 3 PHASE DRVR INVERTING INPUT
栅极驱动器 3 PHASE DRVR INVERTING INPUT
寿命周期:
NRND:
不建议用于新设计。
数据表:
库存量: 1,655
-
库存：
-
1,655 可立即发货出现意外错误。请稍候重试。
-
生产周期：
-
24 周 大于所示数量的预计工厂生产时间。
定价 (含13% 增值税)
| 数量 | 单价 |
总价
|
|---|---|---|
| ¥70.6363 | ¥70.64 | |
| ¥54.5903 | ¥545.90 | |
| ¥47.3131 | ¥1,182.83 | |
| ¥42.2733 | ¥4,227.33 | |
| ¥41.6066 | ¥10,401.65 | |
| ¥41.5275 | ¥20,763.75 | |
| ¥41.4371 | ¥82,874.20 |
备用包装
数据表
Application Notes
- Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs (PDF)
- HV Floating MOS Gate Drivers (PDF)
- Six-Output 600V MGDs Simplify 3-Phase Motor Drives (PDF)
- Understanding HVIC Datasheet Specifications (PDF)
- Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs (PDF)
Models
Product Catalogs
Technical Resources
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- Low Gate Charge HEXFETS simplify Gate Drive and Lower Cost (PDF)
- Managing Transients in Control IC Driven Power Stages (PDF)
- Miniaturization of the Power Electronics for Motor Drives (PDF)
- PWM Control Methods Increases Efficiency and Reliability; Extends Battery Charge-cycle Time (PDF)
- Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTs (PDF)
- CNHTS:
- 8542399000
- CAHTS:
- 8542310000
- USHTS:
- 8542390090
- KRHTS:
- 8542311000
- TARIC:
- 8542319000
- MXHTS:
- 8542310302
- ECCN:
- EAR99
