IR2214SSPBF
图像仅供参考
请参阅产品规格
请参阅产品规格
942-IR2214SSPBF
IR2214SSPBF
制造商：
说明：
栅极驱动器 1200V half-bridge,3A DESAT &Soft SD,440n
栅极驱动器 1200V half-bridge,3A DESAT &Soft SD,440n
库存量: 2,620
-
库存：
-
2,620 可立即发货出现意外错误。请稍候重试。
-
生产周期：
-
20 周 大于所示数量的预计工厂生产时间。
定价 (含13% 增值税)
| 数量 | 单价 |
总价
|
|---|---|---|
| ¥58.3984 | ¥58.40 | |
| ¥44.5785 | ¥445.79 | |
| ¥38.4652 | ¥961.63 | |
| ¥37.0527 | ¥3,705.27 | |
| ¥35.9001 | ¥8,975.03 | |
| ¥35.6515 | ¥17,825.75 | |
| ¥34.8266 | ¥34,826.60 | |
| 4,400 | 报价 |
备用包装
数据表
Application Notes
- Buffer Interface with Negative Gate Bias for Desat Protected HVICs used in High Power Applications (PDF)
- Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs (PDF)
- HV Floating MOS Gate Drivers (PDF)
- Understanding HVIC Datasheet Specifications (PDF)
- Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs (PDF)
Product Catalogs
Technical Resources
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- High Current Buffer for Control IC's (PDF)
- Low Gate Charge HEXFETS simplify Gate Drive and Lower Cost (PDF)
- Managing Transients in Control IC Driven Power Stages (PDF)
- PWM Control Methods Increases Efficiency and Reliability; Extends Battery Charge-cycle Time (PDF)
- Short-Circuit Protection for Power Inverters (PDF)
- Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTs (PDF)
- CNHTS:
- 8542399000
- CAHTS:
- 8542390000
- USHTS:
- 8542390090
- KRHTS:
- 8542311000
- TARIC:
- 8542319000
- MXHTS:
- 8542310302
- ECCN:
- EAR99
