ISC028N04NM5ATMA1

Infineon Technologies
726-ISC028N04NM5ATMA
ISC028N04NM5ATMA1

制造商:

说明:
MOSFET IFX FET 40V

ECAD模型:
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库存量: 13,077

库存:
13,077 可立即发货
生产周期:
52 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:
封装:
整卷卷轴(请按5000的倍数订购)

定价 (含13% 增值税)

数量 单价
总价
剪切带/MouseReel™
¥13.1532 ¥13.15
¥8.3507 ¥83.51
¥5.5257 ¥552.57
¥4.3392 ¥2,169.60
¥3.7177 ¥3,717.70
¥3.6838 ¥9,209.50
整卷卷轴(请按5000的倍数订购)
¥3.4013 ¥17,006.50
† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。

产品属性 属性值 选择属性
Infineon
产品种类: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
TDSON-FL-8
N-Channel
1 Channel
40 V
121 A
2.8 mOhms
- 20 V, 20 V
2.2 V
29 nC
- 55 C
+ 175 C
75 W
Enhancement
Reel
Cut Tape
MouseReel
商标: Infineon Technologies
组装国: MY
扩散国家: DE
原产国: DE
产品类型: MOSFETs
工厂包装数量: 5000
子类别: Transistors
零件号别名: ISC028N04NM5 SP005399107
单位重量: 369.800 mg
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已选择的属性: 0

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

StrongIRFET™ Power MOSFETs

Infineon StrongIRFET™ Power MOSFET family is optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current-carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.