S29GL01GS11TFI010

Infineon Technologies
797-S29GL01GS11TFI01
S29GL01GS11TFI010

制造商：

说明：
NOR闪存 1G 3V 110ns Parallel NOR闪存

数据表:
ECAD模型:
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库存量: 1,802

库存：
1,802 可立即发货
生产周期：
3 周 大于所示数量的预计工厂生产时间。
最少： 1   倍数： 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥114.8984 ¥114.90
¥108.8303 ¥1,088.30
¥105.429 ¥2,635.73
¥101.1802 ¥5,059.01
¥98.0501 ¥9,805.01
¥96.841 ¥24,210.25
¥96.7506 ¥88,043.05

备用包装

制造商零件编号:
S29GL01GS11TFI013
包装:
Reel, Cut Tape
供货情况:
库存量
单价:
¥134.4926
最小:
1

产品属性 属性值 选择属性
Infineon
产品种类: NOR闪存
RoHS:  
SMD/SMT
TSOP-56
S29GL01G/512/256/128S
1 Gbit
2.7 V
3.6 V
60 mA
Parallel
64 M x 16
16 bit
Asynchronous
- 40 C
+ 85 C
Tray
商标: Infineon Technologies
组装国: Not Available
扩散国家: Not Available
原产国: US
湿度敏感性: Yes
产品类型: NOR Flash
速度: 110 ns
工厂包装数量: 910
子类别: Memory & Data Storage
商标名: MirrorBit
单位重量: 17.078 g
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已选择的属性: 0

数据表

CNHTS:
8542329000
CAHTS:
8542320040
USHTS:
8542320051
JPHTS:
8542320312
KRHTS:
8542321040
TARIC:
8542326100
MXHTS:
8542320299
ECCN:
3A991.b.1.a

S29 GL-S MIRRORBIT™ Eclipse™ Flash

Infineon Technologies S29 GL-S MIRRORBIT™ Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MIRRORBIT Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. Infineon S29 GL-S MIRRORBIT Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.

S29GL01G/512/256/128S MIRRORBIT™ Flash Memory

Infineon Technologies S29GL01G/512/256/128S MIRRORBIT™ Eclipse Flash Memory is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MIRRORBIT Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set is compatible with the JEDEC Flash standards. The MIRRORBIT GL Flash Memory Device family supports Universal Footprint, which provides one footprint across all densities. The flash memory also supports product families and process technologies. This allows manufacturers to design single platform and simple scale Flash memory capacity up or down, depending on features and functionality.

MIRRORBIT™ NOR GL Flash Memory Device

Infineon Technologies MIRRORBIT™ NOR GL Flash Memory Devices include the 100ns access speeds. This additional offering of Cypress MIRRORBIT NOR GL Flash Memory now provides the fastest access times in the high-density versions available. MIRRORBIT NOR GL Flash Memory Devices are ideal for today's embedded applications that require higher density, better performance, and lower power consumption. Cypress MIRRORBIT GL NOR Flash family is optimized for various embedded applications' voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB to 2GB, each MIRRORBIT NOR GL Flash Memory Device requires only a 3.0V power supply for reading and writing functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress MIRRORBIT GL Flash Memory Device family supports Cypress' Universal Footprint, which provides one footprint across all densities, product families, and process technologies, allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system.

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