STGWA15M120DF3

STMicroelectronics
511-STGWA15M120DF3
STGWA15M120DF3

制造商:

说明:
绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

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库存量: 467

库存:
467 可立即发货
生产周期:
14 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥42.601 ¥42.60
¥28.2839 ¥282.84
¥22.4983 ¥2,249.83
¥16.1251 ¥9,675.06

产品属性 属性值 选择属性
STMicroelectronics
产品种类: 绝缘栅双极晶体管(IGBT)
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
1.85 V
- 20 V, 20 V
30 A
283 W
- 55 C
+ 175 C
M
Tube
商标: STMicroelectronics
组装国: Not Available
扩散国家: Not Available
原产国: CN
栅极—射极漏泄电流: 250 nA
产品类型: IGBT Transistors
工厂包装数量: 600
子类别: IGBTs
单位重量: 38 g
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已选择的属性: 0

                        
ST NCNR & NON Warrantied

Stock on hand has no manufacture warranty.

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5-1013-36

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.