CSD17505Q5A

Texas Instruments
595-CSD17505Q5A
CSD17505Q5A

制造商:

说明:
MOSFET 30V NCh NexFET Power MOSFET A 595-CSD175 A 595-CSD17581Q5A

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供货情况

库存:
0

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生产周期:
12 周 预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:
封装:
整卷卷轴(请按2500的倍数订购)

定价 (含13% 增值税)

数量 单价
总价
剪切带/MouseReel™
¥19.7637 ¥19.76
¥12.7351 ¥127.35
¥8.6897 ¥868.97
¥6.9269 ¥3,463.45
¥6.5879 ¥6,587.90
整卷卷轴(请按2500的倍数订购)
¥6.328 ¥15,820.00
† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。

类似产品

Texas Instruments CSD17581Q5A
Texas Instruments
MOSFET 30-V N channel NexF ET power MOSFET si A A 595-CSD17581Q5AT

产品属性 属性值 选择属性
Texas Instruments
产品种类: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
VSONP-8
N-Channel
1 Channel
30 V
100 A
4.6 mOhms
- 20 V, 20 V
1.3 V
10 nC
- 55 C
+ 150 C
3.2 W
Enhancement
NexFET
Reel
Cut Tape
MouseReel
商标: Texas Instruments
配置: Single
组装国: Not Available
扩散国家: Not Available
原产国: CN
下降时间: 6.1 ns
产品类型: MOSFETs
上升时间: 11.5 ns
系列: CSD17505Q5A
工厂包装数量: 2500
子类别: Transistors
晶体管类型: 1 N-Channel
单位重量: 330 mg
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已选择的属性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

CSD17505Q5A 30V, NexFET™ Power MOSFET

Texas Instruments CSD17505Q5A 30V, N-Channel NexFET™ Power MOSFET is designed to minimize losses in power conversion applications. TI CSD17505Q5A N-Channel NexFET Power MOSFET features ultralow gate charge total (4.5V) of 10nC (typical) and ultralow gate charge gate to drain of 2.7nC (typical). TI CSD17505Q5A NexFET Power MOSFET offers low thermal resistance and are optimized for control and synchronous FET applications. They are also ideal for point-of-load synchronous buck in networking, telecom, and computing systems.
Learn More

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFETPower MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.

NexFET™功率MOSFET

Texas Instruments NexFET™功率MOSFET可以为相同的阻抗提供二分之一的栅极电荷,以便设计人员能够实现90%的供电效率并使频率加倍。TI NexFET功率MOSFET实现了垂直电流与横向功率MOSFET的结合。该系列器件具有较低的导通电阻,只需极低的栅极电荷,且需要采用行业标准封装外形,这种组合是现有硅平台所无法实现的。TI NexFET功率MOSFET技术可以提高大功率计算、网络、服务器系统和电源中的能源利用率。

TI N-Channel 8-23-12


NexFET N通道功率MOSFET

Texas Instruments NexFET N通道功率MOSFET设计用于在功率转换应用中最大限度地降低损耗。这些N通道器件具有超低Qg和Qd以及低热阻。这些器件可以耐受雪崩,采用SON 5mm x 6mm塑料封装。