CSD88584Q5DC

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.

Power Block TI NexFET

NexFET™功率MOSFET

Texas Instruments NexFET™功率MOSFET可以为相同的阻抗提供二分之一的栅极电荷，以便设计人员能够实现90%的供电效率并使频率加倍。TI NexFET功率MOSFET实现了垂直电流与横向功率MOSFET的结合。该系列器件具有较低的导通电阻，只需极低的栅极电荷，且需要采用行业标准封装外形，这种组合是现有硅平台所无法实现的。TI NexFET功率MOSFET技术可以提高大功率计算、网络、服务器系统和电源中的能源利用率。

CSD88584Q5DC 40V半桥NexFET电源块

Texas Instruments CSD88584Q5DC 40V半桥NexFET电源块是一款经过优化、用于大电流电机控制应用的设计。这些应用包括手持无线园艺和电动工具等。该器件采用TI获得专利的堆叠裸片技术，以最大限度地减小寄生电感，同时提供完整的半桥。另外，该器件还采用节省空间的热增强型DualCool™ 5mm × 6mm封装。利用暴露的金属顶部，该电源块器件允许简单散热应用将热量从封装顶部吸收并将其从PCB带走， 从而在许多电机控制应用要求的较高电流下实现出色的热性能。
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