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IPP023NE7N3 G

Name: Infineon IPP023NE7N3 G
Brand: Infineon Technologies
SKU: 726-IPP023NE7N3G
Price: 31.11 RMB
Availability: InStock

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Mouser编号：

726-IPP023NE7N3G

制造商编号：

IPP023NE7N3 G

制造商：

Infineon Technologies

说明：

MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3

数据表:

IPP023NE7N3 G 数据表 (PDF)

ECAD模型:

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库存量: 2,640

库存：: 2,640 可立即发货

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生产周期：: 4 周大于所示数量的预计工厂生产时间。

输入数量：

最少： 1 倍数： 1

单价:

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总价:

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预估关税:

定价 (含13% 增值税)

数量	单价	总价
	¥35.1543	¥35.15
	¥22.9164	¥229.16
	¥17.9444	¥1,794.44
	¥14.9725	¥7,486.25
	¥13.899	¥13,899.00
	¥13.0741	¥32,685.25

备用包装

制造商零件编号:

IPP023NE7N3GXKSA1

包装:

Tube

供货情况:

库存量

单价:

¥32.4197

最小:

类似产品

制造商：

Infineon Technologies

制造商编号：

IPP023NE7N3GXKSA1

说明：

MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3

与当前部分进行比较

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产品属性	属性值	选择属性
制造商:	Infineon
产品种类:	MOSFET
RoHS:
技术:	Si
安装风格:	Through Hole
封装 / 箱体:	TO-220-3
晶体管极性:	N-Channel
通道数量:	1 Channel
Vds-漏源极击穿电压:	75 V
Id-连续漏极电流:	120 A
Rds On-漏源导通电阻:	2.1 mOhms
Vgs - 栅极-源极电压:	- 20 V, 20 V
Vgs th-栅源极阈值电压:	2.3 V
Qg-栅极电荷:	206 nC
最小工作温度:	- 55 C
最大工作温度:	+ 175 C
Pd-功率耗散:	300 W
通道模式:	Enhancement
商标名:	OptiMOS
封装:	Tube
商标:	Infineon Technologies
配置:	Single
组装国:	Not Available
扩散国家:	Not Available
原产国:	MY
下降时间:	22 ns
正向跨导 - 最小值:	98 S
产品类型:	MOSFETs
上升时间:	26 ns
系列:	OptiMOS 3
工厂包装数量:	500
子类别:	Transistors
晶体管类型:	1 N-Channel
典型关闭延迟时间:	70 ns
典型接通延迟时间:	19 ns
零件号别名:	SP000641722 IPP23NE7N3GXK IPP023NE7N3GXKSA1
单位重量:	2 g

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已选择的属性: 0

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数据表

IPP023NE7N3 G 数据表 (PDF)

Product Catalogs

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Switch Mode Power Supplies (SMPS)

Infineon Technologies Switch Mode Power Supplies (SMPS) are a cost-effective line that includes high voltage MOSFETs, control ICs, and Silicon Carbide diodes for PFC and PWM stages, as well as low voltage MOSFETs for synchronous rectification. With these SMPS products Infineon supports the trends towards continuously reducing power consumption. Especially versatile is the new CoolMOS™ 600V C6 family which combines good efficiency with attractive pricing, as does our 3rd generation SiC diodes. For synchronous rectification the OptiMOS™ 3 series offers extremely low on-state resistance and low capacitances. Infineon's new control ICs support topologies such as quasi-resonant flyback and LLC.

Switch Mode Power Supplies - High Power Topology

Infineon Technologies Switch Mode Power Supplies - High Power Topology is suitable for power applications above 400W. Following the front end stage of an AC/DC rectifier, a DC/DC power converter is required to step down the bus voltage and provide a galvanically isolated and tightly regulated DC output (12V, 24V, 48V). While a wide range of isolated topologies are available, the phase-shifted full-bridge converter is more suitable for higher power applications for reasons such as its inherent zero-voltage Switching for the primary side switches.

Infineon OptiMOS™ 3

Infineon's OptiMOS™ 3 40V, 60V, and 80V families reduce power losses up to 30% in a given standard TO package. The low switching losses and on-state resistance of the devices enable an increase in power densities by up to 30% and a reduction in part count for a given application by more than 25%, compared to competitive solutions. The OptiMOS™ 3 devices offer best-in-class RDS(on), achieving an RDS(on) as low as 1.6mΩ for 40V products in SuperSO8™ packages, 3.5mΩ for 60V products in D-PAK packages, and 2.5mΩ for 80V products in D2-PAK packages. The MOSFETs are ideal for a variety of power conversion and management applications, including SMPSs, DC/DC converters, and DC motor drives.