FGH40T120SQDNL4

onsemi
863-FGH40T120SQDNL4
FGH40T120SQDNL4

制造商:

说明:
绝缘栅双极晶体管(IGBT) IGBT 1200V 40A UFS

ECAD模型:
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库存量: 257

库存:
257 可立即发货
生产周期:
15 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥82.7951 ¥82.80
¥48.9629 ¥489.63
¥44.1717 ¥4,417.17

产品属性 属性值 选择属性
onsemi
产品种类: 绝缘栅双极晶体管(IGBT)
RoHS:  
Si
TO-247-4
Through Hole
Single
1.2 kV
1.78 V
- 20 V, 20 V
160 A
454 W
- 55 C
+ 175 C
FGH40T120SQDNL4
Tube
商标: onsemi
组装国: Not Available
扩散国家: Not Available
原产国: CN
栅极—射极漏泄电流: 200 nA
产品类型: IGBT Transistors
工厂包装数量: 450
子类别: IGBTs
单位重量: 9.195 g
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已选择的属性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

1200V Field Stop Trench IGBTs

onsemi 1200V Field Stop Trench IGBTs feature minimized conduction losses by having a VCE(SAT) of 1.8V, lower than previous fast switching NPT IGBTs. The 1200V field stop trench IGBTs target hard switching industrial applications such as solar inverters, uninterruptible power supplies (UPS), and welders. The 1200V field stop trench IGBT series operates at high switching frequencies, and is 100% tested for clamped inductive switching at current levels of four times the rated current to guarantee a larger safe operating area. onsemi 1200V Field Stop Trench IGBTs are available in TO-247-3,  TO-247-4, and DPAK-3 packages, and are offered in 15A, 25A, and 40A ratings.

储能解决方案

onsemi储能系统(ESS)以不同的形式储存来自煤炭、核能、风能和太阳能等各种能源的电力,包括电池(电化学)、压缩空气(机械)和熔盐(热能)。该解决方案的重点是与太阳能逆变器系统相连的蓄电池储能系统。