FM28V100-TG

Infineon Technologies
877-FM28V100-TG
FM28V100-TG

制造商：

说明：
F-RAM 1M (128Kx8) 2.2-3.6V F-RAM

数据表:
ECAD模型:
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了解Infineon Technologies FM28V100-TG详情

库存量: 673

库存：
673 可立即发货
生产周期：
20 周 大于所示数量的预计工厂生产时间。
最少： 1   倍数： 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥220.2596 ¥220.26
¥204.4509 ¥2,044.51
¥198.0325 ¥4,950.81
¥185.5234 ¥9,276.17
¥179.0033 ¥17,900.33
¥175.0935 ¥43,773.38
¥175.0144 ¥81,906.74
936 报价

备用包装

制造商零件编号:
FM28V100-TGTR
包装:
Reel, Cut Tape, MouseReel
供货情况:
库存量
单价:
¥232.1811
最小:
1

类似产品

Infineon Technologies FM28V100-TGTR
Infineon Technologies
F-RAM 1M (128Kx8) 2.2-3.6V F-RAM
与当前部分进行比较

产品属性 属性值 选择属性
Infineon
产品种类: F-RAM
RoHS:  
1 Mbit
Parallel
128 k x 8
TSOP-32
60 ns
2 V
3.6 V
- 40 C
+ 85 C
FM28V100-TG
Tray
商标: Infineon Technologies
组装国: Not Available
扩散国家: Not Available
原产国: US
湿度敏感性: Yes
安装风格: SMD/SMT
工作电源电压: 3.3 V
产品类型: FRAM
工厂包装数量: 468
子类别: Memory & Data Storage
单位重量: 9.072 g
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已选择的属性: 0

数据表

CNHTS:
8542329090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
TARIC:
8542329000
MXHTS:
8542320299
ECCN:
EAR99

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.

Parallel F-RAM Non-Volatile Memory

Infineon Technologies Parallel F-RAM Non-Volatile Memory operates similarly to other RAM devices and can be used as a drop-in replacement for a standard SRAM in a system. These F-RAMs read and write similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. These features make these devices ideal for non-volatile memory applications requiring frequent or rapid writes.

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