IDW20G65C5XKSA1

Infineon Technologies
726-IDW20G65C5XKSA1
IDW20G65C5XKSA1

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说明：
碳化硅肖特基二极管 SIC DIODES

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库存量: 720

库存：
720
可立即发货
在途量:
720
生产周期：
8
周 大于所示数量的预计工厂生产时间。
最少： 1   倍数： 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥60.4663 ¥60.47
¥34.9057 ¥349.06
¥29.2783 ¥2,927.83
¥28.7811 ¥13,814.93

产品属性 属性值 选择属性
Infineon
产品种类: 碳化硅肖特基二极管
RoHS:  
Through Hole
TO-247-3
Single
20 A
650 V
1.5 V
103 A
1.1 uA
- 55 C
+ 175 C
XDW20G65
Tube
商标: Infineon Technologies
组装国: CN
扩散国家: AT
原产国: AT
Pd-功率耗散: 112 W
产品类型: SiC Schottky Diodes
工厂包装数量: 240
子类别: Diodes & Rectifiers
商标名: CoolSiC
Vr - 反向电压 : 650 V
零件号别名: IDW20G65C5 SP001632900
单位重量: 6 g
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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

Switch Mode Power Supplies (SMPS)

Infineon Technologies Switch Mode Power Supplies (SMPS) are a cost-effective line that includes high voltage MOSFETs, control ICs, and Silicon Carbide diodes for PFC and PWM stages, as well as low voltage MOSFETs for synchronous rectification. With these SMPS products Infineon supports the trends towards continuously reducing power consumption. Especially versatile is the new CoolMOS™ 600V C6 family which combines good efficiency with attractive pricing, as does our 3rd generation SiC diodes. For synchronous rectification the OptiMOS™ 3 series offers extremely low on-state resistance and low capacitances. Infineon's new control ICs support topologies such as quasi-resonant flyback and LLC.

碳化硅CoolSiC™ MOSFET和二极管

英飞凌碳化硅CoolSiC™ MOSFET和二极管提供的产品组合可满足对更智能、更高效能量生成、传输和消耗的需求。CoolSiC产品组合可满足客户在中高功率系统中减小系统尺寸和降低成本的需求，同时满足最高质量标准，延长系统使用寿命并确保可靠性。凭借CoolSiC，客户将实现最严格的效率目标，同时降低操作系统成本。该产品组合包括CoolSiC肖特基二极管、CoolSiC混合模块、CoolSiC MOSFET模块和分立式器件，以及用于驱动碳化硅器件的EiceDRIVER™ 栅极驱动器IC。

Switch Mode Power Supplies - High Power Topology

Infineon Technologies Switch Mode Power Supplies - High Power Topology is suitable for power applications above 400W. Following the front end stage of an AC/DC rectifier, a DC/DC power converter is required to step down the bus voltage and provide a galvanically isolated and tightly regulated DC output (12V, 24V, 48V). While a wide range of isolated topologies are available, the phase-shifted full-bridge converter is more suitable for higher power applications for reasons such as its inherent zero-voltage Switching for the primary side switches.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

体验功率差异

英飞凌是功率半导体市场的领导者。英飞凌拥有20多年的经验，是革命性CoolMOS™ 超级结MOSFET技术的创新者，在电源管理领域继续开拓创新。客户可以根据单独的设计/系统要求从业界最广泛的硅基SJ MOSFET产品组合中进行选择。作为掌握所有三种主要电源技术的少数制造商之一，英飞凌以突破性的宽带隙 (WBG) 产品补充了这一系列产品。该产品包括碳化硅基CoolSiC™ MOSFET、匹配二极管和氮化镓CoolGaN™ E模式HEMT。可提供各种解决方案，从卓越的性价比到无与伦比的稳健性，再到同类最佳的器件。这使得客户能够构建更高效、环保和可持续的应用。

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