PJD45N15S-AU_L2_006A1

Panjit
241-PJD45N15SAUL26A1
PJD45N15S-AU_L2_006A1

制造商:

说明:
MOSFET 150V N-Channel Enhancement Mode MOSFET

寿命周期:
新产品:
此制造商的新产品。
ECAD模型:
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库存量: 2,925

库存:
2,925 可立即发货
生产周期:
20 周 大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥24.3176 ¥24.32
¥15.7974 ¥157.97
¥10.9158 ¥1,091.58
¥9.0965 ¥4,548.25
¥8.6897 ¥8,689.70
整卷卷轴(请按3000的倍数订购)
¥8.5202 ¥25,560.60

产品属性 属性值 选择属性
Panjit
产品种类: MOSFET
RoHS:  
Si
SMD/SMT
TO-252AA-2
N-Channel
1 Channel
150 V
40 A
25 mOhms
- 20 V, 20 V
4 V
36 nC
- 55 C
+ 175 C
100 W
Enhancement
AEC-Q101
Reel
Cut Tape
商标: Panjit
配置: Single
组装国: Not Available
扩散国家: Not Available
原产国: CN
下降时间: 31 ns
产品类型: MOSFETs
上升时间: 31 ns
工厂包装数量: 3000
子类别: Transistors
晶体管类型: 1 N-Channel
典型关闭延迟时间: 24 ns
典型接通延迟时间: 12 ns
零件号别名: PJD45N15S
单位重量: 321.700 mg
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已选择的属性: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

150V N-Channel Automotive MOSFETs

PANJIT 150V N-Channel Automotive MOSFETs are enhancement-mode MOSFETs optimized to have good Figure of Merit (FOM) and AEC-Q101 qualified with standard-level gate drive. These enhancement-mode automotive MOSFETs operate from 18A to 65A continuous drain current and are AEC-Q101 qualified devices. The 150V N-channel MOSFETs operate from -55°C to 175°C junction and storage temperature range. These N-channel MOSFETs feature green molding compounds that are compliant with the IEC 61249 standard and EU RoHS 2.0. The 150V N-channel MOSFETs are ideal for Battery Management System (BMS), Brushless Direct Current (BLDC), and Switch Mode Power Supply (SMPS) SR.

60/100/150V Automotive-Grade MOSFETs

PANJIT 60/100/150V Automotive-Grade MOSFETs are a family of 60V, 100V, and 150V AEC-Q101 qualified MOSFETs. The PANJIT 60/100/150V MOSFETs are designed with advanced trench technology for superior performance and efficiency. Ideal for automotive and industrial power systems, these MOSFETs offer an exceptional figure of merit (FOM), significantly lower RDS(ON), and reduced capacitance. These features minimize conduction and switching losses for improved electrical performance. Available in compact packages like DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA, and TO-220AB-L, these MOSFETs enable efficient design solutions for modern electronics.