PJQ4439EP_R2_00201 Panjit

说明：

MOSFET 30V P-Channel Standard Trench MOSFET

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产品属性	属性值	选择属性
制造商:	Panjit
产品种类:	MOSFET
发货限制：	Mouser 目前在您所在地区不销售该产品。
RoHS:
技术:	Si
安装风格:	SMD/SMT
封装 / 箱体:	DFN-3333-8
晶体管极性:	P-Channel
通道数量:	1 Channel
Vds-漏源极击穿电压:	30 V
Id-连续漏极电流:	30 A
Vgs - 栅极-源极电压:	- 25 V, 25 V
Vgs th-栅源极阈值电压:	2.5 V
Qg-栅极电荷:	22 nC
最小工作温度:	- 55 C
最大工作温度:	+ 150 C
Pd-功率耗散:	2.1 W
通道模式:	Enhancement
封装:	Reel
商标:	Panjit
配置:	Single
组装国:	Not Available
扩散国家:	Not Available
原产国:	CN
下降时间:	40 ns
产品类型:	MOSFETs
上升时间:	3 ns
工厂包装数量:	5000
子类别:	Transistors
晶体管类型:	1 P-Channel
典型关闭延迟时间:	36 ns
典型接通延迟时间:	7 ns
零件号别名:	PJQ4439EP
单位重量:	30.495 mg

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数据表

PJQ4439EP_R2_00201 数据表 (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

PJQx43 30V P-Channel Enhancement Mode MOSFETs

PANJIT PJQx43 30V P-Channel Enhancement Mode MOSFETs are reliable and rugged MOSFETs with ±25V gate-source voltage and -55°C to 150°C operating temperature range. These MOSFETs are 100% UIS tested and are available in the DFN5060X-8L and DFN3333-8L packages. The PJQx43 P-Channel MOSFETs are lead-free in compliance with EU RoHS 2.0 and are green molding compounds as per IEC 61249 standard.

Power MOSFETs for Wireless Charging Transmitters

PANJIT Power MOSFETs for Wireless Charging Transmitters provide an advanced solution for the wireless chargers to work properly and efficiently. These wireless charging transmitters are designed to transfer the electromagnetic field to the battery receiver of its application. The power MOSFETs are assembled in a low-profile package that saves space while delivering similar on-resistance and thermal resistance. These devices feature low switching losses, high switching frequency operation, low operating temperature, and low gate drive losses. The power MOSFETs are ideally used in wireless charging pads, wireless charging sockets, wireless charging cases, and wireless charging stations.