UF3C065030T3S

onsemi
431-UF3C065030T3S
UF3C065030T3S

制造商:

说明:
碳化硅MOSFET 650V/30MOSICFETG3TO220

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库存量: 902

库存:
902 可立即发货
生产周期:
31 周 大于所示数量的预计工厂生产时间。
数量大于902的订购须受最低订购要求的限制。
本产品所报告的交付时间长。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:

定价 (含13% 增值税)

数量 单价
总价
¥173.7827 ¥173.78
¥134.6621 ¥1,346.62

产品属性 属性值 选择属性
onsemi
产品种类: 碳化硅MOSFET
RoHS:  
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
85 A
35 mOhms
- 25 V, + 25 V
5 V
51 nC
- 55 C
+ 175 C
441 W
Enhancement
AEC-Q101
SiC FET
商标: onsemi
配置: Single
组装国: Not Available
扩散国家: Not Available
原产国: PH
下降时间: 17 ns
封装: Tube
产品类型: SiC MOSFETS
上升时间: 28 ns
系列: UF3C
工厂包装数量: 1000
子类别: Transistors
技术: SiC
典型关闭延迟时间: 61 ns
典型接通延迟时间: 43 ns
单位重量: 2 g
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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.