IM2G04D2DBBG-25 Intelligent Memory

说明：

DRAM DDR2 2Gb, 1.8V, 512Mx4, 400MHz (800Mbps), 0C to +95C, FBGA-60

ECAD模型:

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交货限制:

Mouser 目前在您所在地区不销售该产品。

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产品属性	属性值	选择属性
制造商:	Intelligent Memory
产品种类:	动态随机存取存储器
交货限制:	Mouser 目前在您所在地区不销售该产品。
RoHS:
类型:	SDRAM - DDR2
存储容量:	2 Gbit
数据总线宽度:	4 bit
最大时钟频率:	400 MHz
封装 / 箱体:	FBGA-60
组织:	512 M x 4
访问时间:	400 ps
电源电压-最小:	1.7 V
电源电压-最大:	1.9 V
最小工作温度:	0 C
最大工作温度:	+ 95 C
系列:	IM2G04D2
封装:	Tray
商标:	Intelligent Memory
组装国:	Not Available
扩散国家:	Not Available
原产国:	CN
湿度敏感性:	Yes
安装风格:	SMD/SMT
产品类型:	DRAM
工厂包装数量:	264
子类别:	Memory & Data Storage
电源电流—最大值:	58 mA
单位重量:	179 mg

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已选择的属性: 0

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数据表

IM2G04D2DBBG-25 数据表 (PDF)

CAHTS:: 8542320020
USHTS:: 8542320036
MXHTS:: 8542320299
ECCN:: EAR99

Dynamic Random Access Memory (DRAM)

Intelligent Memory Dynamic Random Access Memory (DRAM) includes a full range of JEDEC-compliant DRAMs and ECC DRAMs (SDRAM, DDR, DDR2, DDR3, DDR4, LPDDR4). From an application's point of view, these components work like a monolithic device. The DRAM devices allow for maximum levels of memory density without altering existing board layouts or designs.

Double Data Rate 2 (DDR2) SDRAM

Intelligent Memory Double Data Rate (DDR2) Synchronous DRAM (SDRAM) are eight-bank devices that achieve high-speed data transfer rates. Interleaving the eight memory banks allows random access operations faster than standard DRAMs. A chip architecture prefetches multiple bits and then synchronizes the output data to a system clock. All control, address, and circuits are synchronized with the positive edge of an externally supplied clock. In a source-synchronous manner, I/Os are synchronized with a pair of bidirectional strobes. A sequential, gapless data rate is possible depending on the device's burst length, CAS latency, and speed grade.