最新MOSFET

PANJIT 50V Enhancement Mode MOSFETs
PANJIT 50V Enhancement Mode MOSFETs
06/09/2025
These MOSFETs have advanced Trench process technology and offer a low RDS(ON).
PANJIT 60V Automotive P-Channel MOSFETs
PANJIT 60V Automotive P-Channel MOSFETs
04/21/2025
Advanced trench process technology minimizes RDS(ON) while maximizing avalanche ruggedness.
PANJIT PSMB033N10NS2 100V N-Channel MOSFET
PANJIT PSMB033N10NS2 100V N-Channel MOSFET
09/04/2024
Features a high switching speed and low reverse transfer capacitance.
PANJIT 60/100/150V Automotive-Grade MOSFETs
PANJIT 60/100/150V Automotive-Grade MOSFETs
09/03/2024
Family of 60V, 100V, and 150V AEC-Q101 qualified MOSFETs.
PANJIT 150V N-Channel Enhancement-Mode MOSFETs
PANJIT 150V N-Channel Enhancement-Mode MOSFETs
08/29/2024
Features a high switching speed and operates from 4A to 125A continuous drain current.
PANJIT 150V N-Channel Automotive MOSFETs
PANJIT 150V N-Channel Automotive MOSFETs
08/29/2024
Optimized to have excellent FOM and AEC-Q101 qualified with standard-level gate drive.
PANJIT PJQx 30V N-Channel Enhancement Mode MOSFETs
PANJIT PJQx 30V N-Channel Enhancement Mode MOSFETs
06/20/2024
Designed with logic level gate drive and are ideal for automotive applications.
PANJIT PJQx43 30V P-Channel Enhancement Mode MOSFETs
PANJIT PJQx43 30V P-Channel Enhancement Mode MOSFETs
06/20/2024
Reliable and rugged MOSFETs with ±25V gate-source voltage and -55°C to 150°C operating temperature.
PANJIT PJDx0P03E-AU P-Channel Enhancement Mode MOSFETs
PANJIT PJDx0P03E-AU P-Channel Enhancement Mode MOSFETs
10/16/2023
Feature a -30V drain-source voltage, ±25V gate-source voltage, and 3W power dissipation @TC=25°C.
PANJIT PJQ5839E-AU Dual P-Channel Enhancement Mode MOSFET
PANJIT PJQ5839E-AU Dual P-Channel Enhancement Mode MOSFET
10/16/2023
Features a -30V drain-source voltage, ±25V gate-source voltage, and 30W power dissipation @TC=25°C.
PANJIT 100V N-Channel Enhancement Mode MOSFETs
PANJIT 100V N-Channel Enhancement Mode MOSFETs
08/15/2023
Feature low RDS(ON) and high switching speed.
PANJIT 40V Enhancement Mode MOSFETs
PANJIT 40V Enhancement Mode MOSFETs
06/06/2023
Low-voltage MOSFETs with an on-resistance of under 1Ω.
PANJIT 60V N-Channel Enhancement Mode MOSFETs
PANJIT 60V N-Channel Enhancement Mode MOSFETs
05/30/2023
Offers a low reverse transfer capacitance in an AEC-Q101-qualified, DFN5060-8L package.
PANJIT PSMxN08NS1 N-Channel Enhancement Mode MOSFETs
PANJIT PSMxN08NS1 N-Channel Enhancement Mode MOSFETs
11/16/2022
Utilize Trench technology to improve the product characteristics.
PANJIT 60V P-Channel Enhancement Mode MOSFETs
PANJIT 60V P-Channel Enhancement Mode MOSFETs
07/08/2022
Features advanced Trench Process technology and optimized for use as relay drivers and line drivers.
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Nexperia BUK9Q N沟道沟槽MOSFET
Nexperia BUK9Q N沟道沟槽MOSFET
09/09/2025
逻辑级兼容,开关速度快,完全符合AEC-Q101标准,工作温度为175°C。
ROHM Semiconductor 小信号双通道MOSFET
ROHM Semiconductor 小信号双通道MOSFET
06/30/2025
具有低导通电阻和快速开关特性,非常适合用于电机驱动器。
onsemi NVMFS4C03NWFET1G单N沟道功率MOSFET
onsemi NVMFS4C03NWFET1G单N沟道功率MOSFET
06/23/2025
该产品可在紧凑型5mmx6mm PowerFLAT封装中提供出色的热性能和低RDS(on)。
ROHM Semiconductor 汽车用40A和80A功率MOSFET
ROHM Semiconductor 汽车用40A和80A功率MOSFET
06/16/2025
具有低导通电阻,非常适合用于ADAS、汽车和照明应用。
PANJIT 50V Enhancement Mode MOSFETs
PANJIT 50V Enhancement Mode MOSFETs
06/09/2025
These MOSFETs have advanced Trench process technology and offer a low RDS(ON).
onsemi NVMFDx 100V双N沟道功率MOSFET
onsemi NVMFDx 100V双N沟道功率MOSFET
06/09/2025
采用节省空间的DFN-8封装,具有低RDS(on) 值和快速开关特性。 
ROHM Semiconductor RV7E035AT P沟道小信号MOSFET
ROHM Semiconductor RV7E035AT P沟道小信号MOSFET
06/04/2025
一款紧凑型高性能MOSFET,设计用于低压开关应用。
Infineon Technologies CoolMOS™ CM8 650V功率MOSFET
Infineon Technologies CoolMOS™ CM8 650V功率MOSFET
06/03/2025
根据超级结(SJ)原理设计,具有低开关和导通损耗。
Torex Semiconductor XPJ101N04N8R & XPJ102N09N8R N-Channel MOSFETs
Torex Semiconductor XPJ101N04N8R & XPJ102N09N8R N-Channel MOSFETs
06/03/2025
Features low on-resistance, reducing energy losses and improving overall system efficiency.
onsemi NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET
onsemi NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET
05/13/2025
设计用于处理大电流,这对于直流-直流电源转换级至关重要。
Infineon Technologies OptiMOS™ 6 200V 功率MOSFET
Infineon Technologies OptiMOS™ 6 200V 功率MOSFET
04/30/2025
提供优良栅极电荷 x RDS(on) 积 (FOM) 和低导通电阻RDS(on) 。
onsemi NVTFWS003N04XM MOSFET
onsemi NVTFWS003N04XM MOSFET
04/28/2025
低RDS(on) 和低电容,采用符合AEC-Q101标准的µ8FL 3.3mmx3.3mm小型封装。
onsemi NVTFWS1D9N04XM MOSFET
onsemi NVTFWS1D9N04XM MOSFET
04/28/2025
具有低RDS(on) 和低电容,采用符合AEC-Q101标准的3.3mm x 3.3mm小型封装。
onsemi NVBLS1D2N08X MOSFET
onsemi NVBLS1D2N08X MOSFET
04/28/2025
具有低QRR 、RDS(on) 和QG,可最大限度降低驱动器损耗和导通损耗。
PANJIT 60V Automotive P-Channel MOSFETs
PANJIT 60V Automotive P-Channel MOSFETs
04/21/2025
Advanced trench process technology minimizes RDS(ON) while maximizing avalanche ruggedness.
onsemi NVMFWS0D45N04XM MOSFET
onsemi NVMFWS0D45N04XM MOSFET
04/17/2025
40V、469A、单N沟道、STD栅极MOSFET,采用SO8FL封装。
onsemi NVMFWS1D7N04XM MOSFET
onsemi NVMFWS1D7N04XM MOSFET
04/17/2025
40V、154A、单N沟道、STD栅极MOSFET,采用SO8FL封装。
onsemi NVTFWS002N04XM MOSFET
onsemi NVTFWS002N04XM MOSFET
04/17/2025
具有低RDS(on) 和低电容,采用符合AEC-Q101标准的3.3mm x 3.3mm小尺寸封装。
onsemi NVMFWS4D0N04XM MOSFET
onsemi NVMFWS4D0N04XM MOSFET
04/17/2025
具有低RDS(on) 和低电容,采用符合AEC-Q101标准的SO-8FL 5mmx6mm小尺寸封装。
Micro Commercial Components (MCC) MCG4D8N04Y 40V Low RDS(on) N-Channel MOSFETs
Micro Commercial Components (MCC) MCG4D8N04Y 40V Low RDS(on) N-Channel MOSFETs
04/16/2025
Use Split Gate Trench power MOSFET technology and are available in industrial and automotive grade.
Nexperia PXNx N沟道逻辑电平沟槽式MOSFET
Nexperia PXNx N沟道逻辑电平沟槽式MOSFET
04/14/2025
60V和100V MOSFET,专为各种应用中的高效电源管理而设计。
Infineon Technologies OptiMOS™ 6 150V功率MOSFET
Infineon Technologies OptiMOS™ 6 150V功率MOSFET
04/11/2025
具备业内领先的低RDS(on) 、改进的开关性能和出色的EMI表现。
Renesas Electronics REXFET-1 100V和150V功率MOSFET
Renesas Electronics REXFET-1 100V和150V功率MOSFET
03/21/2025
该器件采用可湿润侧边引线的分离栅极技术,非常适合大电流应用。
onsemi 机器视觉
onsemi 机器视觉
03/18/2025
各种图像传感器解决方案,从VGA到45MP,满足机器视觉需求。
IXYS IXFP34N65X2W功率MOSFET
IXYS IXFP34N65X2W功率MOSFET
03/17/2025
650V、100mΩ、X2级HiPerFET™ 功率MOSFET,具有N沟道增强模式。
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