Comchip Technology 最新分立半导体
分离式半导体类型
Comchip Technology CDBKA20120L-HF Low VF Schottky Rectifier
08/23/2023
08/23/2023
Designed with soft and fast switching capacity with 120V reverse voltage and 20A forward current.
Comchip Technology CDBZC0140L-HF Schottky Diode
08/03/2023
08/03/2023
Designed with 40V reverse voltage (VR) and 100mA average rectified forward current (IO).
Comchip Technology CDBHA10200LR-HF Low VF Schottky Barrier Rectifier
06/13/2023
06/13/2023
Designed with 200V repetitive peak reverse voltage and 10A average forward rectified current.
Comchip Technology CDBHA30100LR-HF Low VF Schottky Barrier Rectifier
06/13/2023
06/13/2023
Designed with 100V repetitive peak reverse voltage and 30A average forward rectified current.
Comchip Technology BAS316-HF High-Speed Switching Diode
05/23/2023
05/23/2023
Features 100V repetitive peak reverse voltage, 200mW power dissipation, and 250mA forward current.
Comchip Technology BAS321-HF Fast Switching Diode
05/23/2023
05/23/2023
Features 250V repetitive peak reverse voltage, 250mW power dissipation, and 200mA forward current.
Comchip Technology BAS416-HF Fast Switching Diode
05/23/2023
05/23/2023
Features 85V repetitive peak reverse voltage, 250mW power dissipation, and 200mA forward current.
查看:7 的 1 - 7
Nexperia GANB1R2-040QBA和GANB012-040CBA GaN HEMT
07/03/2025
07/03/2025
40V、1.2mΩ 或12mΩ 、双向氮化镓 (GaN) 高电子迁移率晶体管 (HEMT)。
Renesas Electronics TP65H030G4Px 650 V 30mΩ GaN FET
07/01/2025
07/01/2025
这些FET采用TOLT、TO247和TOLL封装,使用了Gen IV Plus SuperGaN®平台。
Micro Commercial Components (MCC) Instrument Cluster Solutions
06/30/2025
06/30/2025
Provides support for real-time vehicle data in today’s digitally enhanced dashboards.
PANJIT 50V Enhancement Mode MOSFETs
06/09/2025
06/09/2025
These MOSFETs have advanced Trench process technology and offer a low RDS(ON).
查看:985 的 1 - 25
