ROHM Semiconductor 最新分立半导体
ROHM Semiconductor RF6G035BG功率MOSFET
02/02/2024
02/02/2024
具有40V VDSS 、±3.5A ID 、46mΩ低导通电阻(RDS(on))以及1W的功耗(PD)。
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Nexperia GANB1R2-040QBA和GANB012-040CBA GaN HEMT
07/03/2025
07/03/2025
40V、1.2mΩ 或12mΩ 、双向氮化镓 (GaN) 高电子迁移率晶体管 (HEMT)。
Renesas Electronics TP65H030G4Px 650 V 30mΩ GaN FET
07/01/2025
07/01/2025
这些FET采用TOLT、TO247和TOLL封装,使用了Gen IV Plus SuperGaN®平台。
Micro Commercial Components (MCC) Instrument Cluster Solutions
06/30/2025
06/30/2025
Provides support for real-time vehicle data in today’s digitally enhanced dashboards.
PANJIT 50V Enhancement Mode MOSFETs
06/09/2025
06/09/2025
These MOSFETs have advanced Trench process technology and offer a low RDS(ON).
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