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Navitas Semiconductor SiCPAK™ F/G 1200V High-Power Modules
Navitas Semiconductor SiCPAK™ F/G 1200V High-Power Modules
02/20/2025
Robust, high-voltage SiC MOSFETs, critical for reliable, harsh-environment, high-power applications.
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs
09/06/2024
Ideal for AI data center power supplies, EV charging, energy storage systems, and solar solutions.
Navitas Semiconductor Gen-3 Fast (G3F) SiC MOSFETs
Navitas Semiconductor Gen-3 Fast (G3F) SiC MOSFETs
09/03/2024
Developed using a proprietary trench-assisted planar technology for high-speed performance.
Navitas Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs
Navitas Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs
09/03/2024
Enable 22kW, 800V bi-directional on-board chargers for Electric Vehicles (EVs).
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Nexperia BUK9Q N沟道沟槽MOSFET
Nexperia BUK9Q N沟道沟槽MOSFET
09/09/2025
逻辑级兼容，开关速度快，完全符合AEC-Q101标准，工作温度为175°C。
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FET
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FET
07/03/2025
常闭电子模式设备，具有卓越的性能和极低的导通电阻。
Nexperia GANB1R2-040QBA和GANB012-040CBA GaN HEMT
Nexperia GANB1R2-040QBA和GANB012-040CBA GaN HEMT
07/03/2025
40V、1.2mΩ 或12mΩ 、双向氮化镓 (GaN) 高电子迁移率晶体管 (HEMT)。
Renesas Electronics TP65H030G4Px 650 V 30mΩ GaN FET
Renesas Electronics TP65H030G4Px 650 V 30mΩ GaN FET
07/01/2025
这些FET采用TOLT、TO247和TOLL封装，使用了Gen IV Plus SuperGaN®平台。
ROHM Semiconductor 小信号双通道MOSFET
ROHM Semiconductor 小信号双通道MOSFET
06/30/2025
具有低导通电阻和快速开关特性，非常适合用于电机驱动器。
onsemi NVMFS4C03NWFET1G单N沟道功率MOSFET
onsemi NVMFS4C03NWFET1G单N沟道功率MOSFET
06/23/2025
该产品可在紧凑型5mmx6mm PowerFLAT封装中提供出色的热性能和低RDS(on)。
Littelfuse IXSJxN120R1 1200 V SiC功率MOSFET
Littelfuse IXSJxN120R1 1200 V SiC功率MOSFET
06/23/2025
专为要求苛刻的电源转换应用而设计的高性能器件。
ROHM Semiconductor 汽车用40A和80A功率MOSFET
ROHM Semiconductor 汽车用40A和80A功率MOSFET
06/16/2025
具有低导通电阻，非常适合用于ADAS、汽车和照明应用。
PANJIT 50V Enhancement Mode MOSFETs
PANJIT 50V Enhancement Mode MOSFETs
06/09/2025
These MOSFETs have advanced Trench process technology and offer a low RDS(ON).
onsemi NVMFDx 100V双N沟道功率MOSFET
onsemi NVMFDx 100V双N沟道功率MOSFET
06/09/2025
采用节省空间的DFN-8封装，具有低RDS(on) 值和快速开关特性。 
ROHM Semiconductor RV7E035AT P沟道小信号MOSFET
ROHM Semiconductor RV7E035AT P沟道小信号MOSFET
06/04/2025
一款紧凑型高性能MOSFET，设计用于低压开关应用。
Infineon Technologies CoolMOS™ CM8 650V功率MOSFET
Infineon Technologies CoolMOS™ CM8 650V功率MOSFET
06/03/2025
根据超级结（SJ）原理设计，具有低开关和导通损耗。
Torex Semiconductor XPJ101N04N8R & XPJ102N09N8R N-Channel MOSFETs
Torex Semiconductor XPJ101N04N8R & XPJ102N09N8R N-Channel MOSFETs
06/03/2025
Features low on-resistance, reducing energy losses and improving overall system efficiency.
Infineon Technologies CoolSiC™ 750V G2碳化硅MOSFET
Infineon Technologies CoolSiC™ 750V G2碳化硅MOSFET
06/03/2025
汽车级和工业级MOSFET，最大漏极-源极导通电阻高达78mΩ。
onsemi NXH015F120M3F1PTG碳化矽（SiC）模块
onsemi NXH015F120M3F1PTG碳化矽（SiC）模块
05/23/2025
该模块采用15mΩ/1200V M3S碳化硅 (SiC) MOSFET全桥和带三氧化二铝 (Al2O3) DBC陶瓷基板的热敏电阻，封装为F1型。
onsemi NVBG050N170M1碳化矽（SiC）MOSFET
onsemi NVBG050N170M1碳化矽（SiC）MOSFET
05/22/2025
最大76mΩ，在20V最大RDS(ON) 和1700V漏极至源极电压时。
STMicroelectronics STGWA30IH160DF2 1600V IH2系列IGBT
STMicroelectronics STGWA30IH160DF2 1600V IH2系列IGBT
05/22/2025
采用先进、专有的沟槽式栅极场终止型结构打造。
Ampleon BLF981/BLF981S LDMOS Power Transistors
Ampleon BLF981/BLF981S LDMOS Power Transistors
05/15/2025
Designed for high-efficiency broadband applications across a frequency range from HF to 1400MHz.
Ampleon BLP981 LDMOS Power Transistor
Ampleon BLP981 LDMOS Power Transistor
05/15/2025
170W power transistor engineered for broadband applications spanning from HF up to 1400MHz.
Wolfspeed YM六单元碳化硅电源模块
Wolfspeed YM六单元碳化硅电源模块
05/14/2025
汽车级模块，设计用于实现无缝设计集成和耐用性。
onsemi NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET
onsemi NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET
05/13/2025
设计用于处理大电流，这对于直流-直流电源转换级至关重要。
APC-E Silicon Carbide (SiC) MOSFETs
APC-E Silicon Carbide (SiC) MOSFETs
05/06/2025
Delivers high power, high frequency, and unmatched performance for demanding applications.
Infineon Technologies 700V CoolGaN™ G5功率晶体管
Infineon Technologies 700V CoolGaN™ G5功率晶体管
05/02/2025
设计工作在高频下具有出色的效率，使超快速开关成为可能。
Infineon Technologies OptiMOS™ 6 200V 功率MOSFET
Infineon Technologies OptiMOS™ 6 200V 功率MOSFET
04/30/2025
提供优良栅极电荷 x RDS(on) 积 (FOM) 和低导通电阻RDS(on) 。
onsemi NVBLS1D2N08X MOSFET
onsemi NVBLS1D2N08X MOSFET
04/28/2025
具有低QRR 、RDS(on) 和QG，可最大限度降低驱动器损耗和导通损耗。
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