|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- SD3931-10
- STMicroelectronics
-
50:
¥582.402
-
无库存交货期 28 周
|
Mouser 零件编号
511-SD3931-10
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
无库存交货期 28 周
|
|
|
¥582.402
|
|
|
¥560.7286
|
|
最低： 50
倍数： 50
|
|
|
N-Channel
|
Si
|
10 A
|
250 V
|
|
150 MHz
|
21.3 dB
|
175 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
M174
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- SD3933
- STMicroelectronics
-
50:
¥1,004.4231
-
无库存交货期 28 周
|
Mouser 零件编号
511-SD3933
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
无库存交货期 28 周
|
|
最低： 50
倍数： 50
|
|
|
N-Channel
|
Si
|
20 A
|
250 V
|
|
200 MHz
|
29 dB
|
350 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
M177
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Trans 200V 150W 14.8 dB at 175MHz
- SD4931
- STMicroelectronics
-
1:
¥727.5731
-
无库存交货期 28 周
|
Mouser 零件编号
511-SD4931
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Trans 200V 150W 14.8 dB at 175MHz
|
|
无库存交货期 28 周
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
20 A
|
200 V
|
|
250 MHz
|
14.8 dB
|
150 W
|
|
+ 150 C
|
SMD/SMT
|
M174
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Trans 200V 300W 24 dB at 30 MHz
- SD4933
- STMicroelectronics
-
50:
¥1,029.4865
-
无库存交货期 28 周
|
Mouser 零件编号
511-SD4933
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Trans 200V 300W 24 dB at 30 MHz
|
|
无库存交货期 28 周
|
|
最低： 50
倍数： 50
|
|
|
N-Channel
|
Si
|
40 A
|
200 V
|
|
100 MHz
|
24 dB
|
300 W
|
|
+ 150 C
|
SMD/SMT
|
M177
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 60 W, 28 V, HF to 1 GHz RF power LDMOS transistor
- SD56060
- STMicroelectronics
-
60:
¥1,286.9005
-
无库存交货期 28 周
|
Mouser 零件编号
511-SD56060
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 60 W, 28 V, HF to 1 GHz RF power LDMOS transistor
|
|
无库存交货期 28 周
|
|
最低： 60
倍数： 60
|
|
|
N-Channel
|
Si
|
8 A
|
65 V
|
|
|
|
60 W
|
- 65 C
|
+ 200 C
|
Screw Mount
|
M246
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch 65 Volt 4 Amp
- SD57030
- STMicroelectronics
-
50:
¥457.8308
-
无库存交货期 28 周
|
Mouser 零件编号
511-SD57030
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch 65 Volt 4 Amp
|
|
无库存交货期 28 周
|
|
|
¥457.8308
|
|
|
¥420.8572
|
|
最低： 50
倍数： 50
|
|
|
N-Channel
|
Si
|
4 A
|
65 V
|
|
1 GHz
|
13 dB
|
30 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
M243-3
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch 65 Volt 4 Amp
- SD57030-01
- STMicroelectronics
-
50:
¥514.4099
-
无库存交货期 28 周
|
Mouser 零件编号
511-SD57030-01
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch 65 Volt 4 Amp
|
|
无库存交货期 28 周
|
|
|
¥514.4099
|
|
|
¥493.3128
|
|
最低： 50
倍数： 50
|
|
|
N-Channel
|
Si
|
4 A
|
65 V
|
|
1 GHz
|
13 dB
|
30 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
M250
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch 65 Volt 5 Amp
- SD57045-01
- STMicroelectronics
-
50:
¥580.9104
-
无库存交货期 28 周
|
Mouser 零件编号
511-SD57045-01
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch 65 Volt 5 Amp
|
|
无库存交货期 28 周
|
|
|
¥580.9104
|
|
|
¥532.8515
|
|
最低： 50
倍数： 50
|
|
|
N-Channel
|
Si
|
5 A
|
65 V
|
|
1 GHz
|
13 dB
|
45 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
M250
|
Bulk
|
|
|
|
RF MOSFET Transistors 250 W, 28/32 V RF Power LDMOS transistor from HF to 1 GHz
- ST05250
- STMicroelectronics
-
受限供货情况
|
Mouser 零件编号
511-ST05250
|
STMicroelectronics
|
RF MOSFET Transistors 250 W, 28/32 V RF Power LDMOS transistor from HF to 1 GHz
|
|
|
|
|
|
|
N-Channel
|
Si
|
|
90 V
|
|
945 MHz
|
13.4 dB
|
250 W
|
|
+ 200 C
|
SMD/SMT
|
B4E-5
|
Reel
|
|
|
|
RF MOSFET Transistors 10 W, 28 V, HF to 1.6 GHz RF Power LDMOS transistor
- ST16010
- STMicroelectronics
-
受限供货情况
|
Mouser 零件编号
511-ST16010
|
STMicroelectronics
|
RF MOSFET Transistors 10 W, 28 V, HF to 1.6 GHz RF Power LDMOS transistor
|
|
|
|
|
|
|
N-Channel
|
Si
|
|
90 V
|
|
930 MHz
|
21 dB
|
12 W
|
|
+ 200 C
|
SMD/SMT
|
MM-2
|
Reel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS transistor HF up to 1.5 GHz
- ST9045C
- STMicroelectronics
-
1:
¥712.6797
-
无库存交货期 28 周
|
Mouser 零件编号
511-ST9045C
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS transistor HF up to 1.5 GHz
|
|
无库存交货期 28 周
|
|
|
¥712.6797
|
|
|
¥595.4761
|
|
|
¥549.5642
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
9 A
|
90 V
|
|
1.5 GHz
|
|
|
|
+ 200 C
|
SMD/SMT
|
M243-3
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- STAC3932B
- STMicroelectronics
-
80:
¥995.2362
-
无库存交货期 28 周
|
Mouser 零件编号
511-STAC3932B
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
无库存交货期 28 周
|
|
最低： 80
倍数： 80
|
|
|
N-Channel
|
Si
|
20 A
|
250 V
|
|
250 MHz
|
24.6 dB
|
580 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
STAC-244B
|
Bulk
|
|
|
|
RF MOSFET Transistors 80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor
- RF2L16080CF2
- STMicroelectronics
-
受限供货情况
-
NRND
|
Mouser 零件编号
511-RF2L16080CF2
NRND
|
STMicroelectronics
|
RF MOSFET Transistors 80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor
|
|
|
|
|
|
|
N-Channel
|
Si
|
|
65 V
|
1 Ohms
|
1.625 GHz
|
18 dB
|
80 W
|
|
+ 200 C
|
SMD/SMT
|
A2-3
|
Reel
|
|
|
|
RF MOSFET Transistors 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor
- RF2L42008CG2
- STMicroelectronics
-
受限供货情况
-
NRND
|
Mouser 零件编号
511-RF2L42008CG2
NRND
|
STMicroelectronics
|
RF MOSFET Transistors 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor
|
|
|
|
|
|
|
N-Channel
|
Si
|
|
65 V
|
1.5 Ohms
|
3.6 GHz
|
14.5 dB
|
8 W
|
|
+ 200 C
|
SMD/SMT
|
E2-3
|
Reel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
- RF3L05250CB4
- STMicroelectronics
-
100:
¥1,593.4356
-
无库存交货期 52 周
-
NRND
|
Mouser 零件编号
511-RF3L05250CB4
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
|
|
无库存交货期 52 周
|
|
最低： 100
倍数： 100
|
|
|
N-Channel
|
Si
|
2.5 A
|
90 V
|
1 Ohms
|
1 MHz
|
18 dB
|
250 W
|
|
+ 200 C
|
SMD/SMT
|
LBB-5
|
Reel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS transistor HF up to 1.5 GHz
- ST9060C
- STMicroelectronics
-
50:
¥631.4553
-
无库存交货期 28 周
-
NRND
|
Mouser 零件编号
511-ST9060C
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS transistor HF up to 1.5 GHz
|
|
无库存交货期 28 周
|
|
|
¥631.4553
|
|
|
¥579.2606
|
|
最低： 50
倍数： 50
|
|
|
N-Channel
|
Si
|
12 A
|
90 V
|
|
1.5 GHz
|
17.3 dB
|
80 W
|
|
+ 200 C
|
SMD/SMT
|
M243-3
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 50V RF MOS 26dB 123MHz N-Ch
- STAC4932F
- STMicroelectronics
-
80:
¥929.5606
-
无库存交货期 28 周
-
NRND
|
Mouser 零件编号
511-STAC4932F
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 50V RF MOS 26dB 123MHz N-Ch
|
|
无库存交货期 28 周
|
|
最低： 80
倍数： 80
|
|
|
N-Channel
|
Si
|
1 mA
|
200 V
|
|
250 MHz
|
24.6 dB
|
1 kW
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
STAC244F
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 280 W, 28 V, 2.4 to 2.5 GHz RF Power LDMOS transistor
STMicroelectronics RF2L24280CB4
- RF2L24280CB4
- STMicroelectronics
-
100:
¥1,833.4815
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF2L24280CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 280 W, 28 V, 2.4 to 2.5 GHz RF Power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低： 100
倍数： 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 700 W, 40 V, HF to 1 GHz RF power LDMOS transistor
STMicroelectronics RF4L10700CB4
- RF4L10700CB4
- STMicroelectronics
-
100:
¥1,833.4815
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF4L10700CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 700 W, 40 V, HF to 1 GHz RF power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低： 100
倍数： 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 650 W, 28/32 V, 0.4 to 1 GHz RF power LDMOS transistor
STMicroelectronics RF4L15400CB4
- RF4L15400CB4
- STMicroelectronics
-
100:
¥1,833.4815
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF4L15400CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 650 W, 28/32 V, 0.4 to 1 GHz RF power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低： 100
倍数： 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor
STMicroelectronics RF5L0912750CB4
- RF5L0912750CB4
- STMicroelectronics
-
100:
¥1,833.4815
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF5L0912750CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低： 100
倍数： 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor
STMicroelectronics RF5L10111K0CB4
- RF5L10111K0CB4
- STMicroelectronics
-
100:
¥1,833.4815
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF5L10111K0CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低： 100
倍数： 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor
STMicroelectronics RF5L1214750CB4
- RF5L1214750CB4
- STMicroelectronics
-
100:
¥1,833.4815
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF5L1214750CB4
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低： 100
倍数： 100
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor
STMicroelectronics RF5L15030CB2
- RF5L15030CB2
- STMicroelectronics
-
180:
¥428.9706
-
无库存交货期 52 周
|
Mouser 零件编号
511-RF5L15030CB2
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor
|
|
无库存交货期 52 周
|
|
最低： 180
倍数： 180
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Reel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 PTD NEW MAT & PWR SOLUTION
STMicroelectronics SD2931-15W
- SD2931-15W
- STMicroelectronics
-
50:
¥567.2713
-
无库存交货期 28 周
|
Mouser 零件编号
511-SD2931-15W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 PTD NEW MAT & PWR SOLUTION
|
|
无库存交货期 28 周
|
|
|
¥567.2713
|
|
|
¥560.7286
|
|
最低： 50
倍数： 50
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
Bulk
|
|
