|
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 30 Watt
MACOM CGHV27030S
- CGHV27030S
- MACOM
-
1:
¥680.2261
-
|
Mouser 零件编号
941-CGHV27030S
|
MACOM
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 30 Watt
|
|
|
|
|
¥680.2261
|
|
|
¥549.1574
|
|
|
¥490.7929
|
|
|
¥490.7929
|
|
最低: 1
倍数: 1
:
250
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
DFN-12
|
N-Channel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,40W,<500MHz,28V,TMOS
- MRF166W
- MACOM
-
1:
¥1,472.5143
-
|
Mouser 零件编号
937-MRF166W
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,40W,<500MHz,28V,TMOS
|
|
|
|
|
¥1,472.5143
|
|
|
¥1,156.8714
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-200MHz 45Watts 28Volt Gain 17dB
- MRF171A
- MACOM
-
1:
¥676.6214
-
|
Mouser 零件编号
937-MRF171A
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-200MHz 45Watts 28Volt Gain 17dB
|
|
|
|
|
¥676.6214
|
|
|
¥523.3482
|
|
|
¥504.0704
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
211-07-3
|
N-Channel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-500MHz 150Watts 28Volt 10dB
- MRF275G
- MACOM
-
1:
¥2,814.9091
-
|
Mouser 零件编号
937-MRF275G
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-500MHz 150Watts 28Volt 10dB
|
|
|
|
|
¥2,814.9091
|
|
|
¥2,376.9324
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
375-04
|
N-Channel
|
|
|
|
射频(RF)双极晶体管 30-200MHz 30Watts 28Volt Gain 10dB
- MRF314
- MACOM
-
1:
¥570.1641
-
|
Mouser 零件编号
937-MRF314
|
MACOM
|
射频(RF)双极晶体管 30-200MHz 30Watts 28Volt Gain 10dB
|
|
|
|
|
¥570.1641
|
|
|
¥470.2382
|
|
|
¥427.8067
|
|
最低: 1
倍数: 1
|
|
RF Bipolar Transistors
|
Si
|
Screw Mount
|
211-07
|
NPN
|
|
|
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 15 Watt
- CGHV27015S
- MACOM
-
1:
¥478.894
-
|
Mouser 零件编号
941-CGHV27015S
|
MACOM
|
GaN 场效应晶体管 GaN HEMT DC-6.0GHz, 15 Watt
|
|
|
|
|
¥478.894
|
|
|
¥372.7644
|
|
|
¥338.8983
|
|
|
¥338.8983
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
250
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
DFN-12
|
N-Channel
|
|
|
|
射频(RF)双极晶体管 Transistor,960-1215MHz,35V,9pk
MACOM MRF1004MB
- MRF1004MB
- MACOM
-
1:
¥1,731.0809
-
|
Mouser 零件编号
937-MRF1004MB
|
MACOM
|
射频(RF)双极晶体管 Transistor,960-1215MHz,35V,9pk
|
|
|
|
|
¥1,731.0809
|
|
|
¥1,461.6776
|
|
最低: 1
倍数: 1
|
|
RF Bipolar Transistors
|
Si
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET
- PTVA102001EA-V1-R0
- MACOM
-
1:
¥3,070.8202
-
无库存交货期 7 周
-
NRND
|
Mouser 零件编号
941-PTVA102001EA1R0
NRND
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET
|
|
无库存交货期 7 周
|
|
|
¥3,070.8202
|
|
|
¥2,593.1353
|
|
|
¥2,593.1353
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
H-36265-2
|
N-Channel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET
- PTVA127002EV-V1-R0
- MACOM
-
50:
¥8,712.7972
-
无库存交货期 12 周
-
NRND
|
Mouser 零件编号
941-PTVA127002EV1R0
NRND
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET
|
|
无库存交货期 12 周
|
|
最低: 50
倍数: 50
:
50
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
H-36275-4
|
N-Channel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,120W,2-175MHz,28V
- DU28120V
- MACOM
-
20:
¥1,437.8572
-
无库存交货期 26 周
|
Mouser 零件编号
937-DU28120V
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Transistor,Mosfet,120W,2-175MHz,28V
|
|
无库存交货期 26 周
|
|
最低: 20
倍数: 20
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
|
N-Channel
|
|
|
|
射频(RF)双极晶体管 1025-1150MHz 500W Gain 8.5dB
- MRF10502
- MACOM
-
500:
¥3,317.6574
-
无库存交货期 28 周
|
Mouser 零件编号
937-MRF10502
|
MACOM
|
射频(RF)双极晶体管 1025-1150MHz 500W Gain 8.5dB
|
|
无库存交货期 28 周
|
|
最低: 500
倍数: 500
|
|
RF Bipolar Transistors
|
Si
|
|
355J-2
|
NPN
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 80Watts 28Volt Gain 13dB
- MRF173
- MACOM
-
1:
¥639.806
-
交货期 36 周
|
Mouser 零件编号
937-MRF173
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 80Watts 28Volt Gain 13dB
|
|
交货期 36 周
|
|
|
¥639.806
|
|
|
¥555.7679
|
|
|
¥486.126
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
221-11-3
|
N-Channel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-500MHz 100Watts 28Volt Gain 8.8dB
- MRF275L
- MACOM
-
20:
¥1,260.7523
-
无库存交货期 28 周
|
Mouser 零件编号
937-MRF275L
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-500MHz 100Watts 28Volt Gain 8.8dB
|
|
无库存交货期 28 周
|
|
最低: 20
倍数: 20
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
333-04
|
N-Channel
|
|
|
|
射频(RF)双极晶体管 Transistor,20-500MHz,28V,10W
- MRF321
- MACOM
-
1:
¥1,193.845
-
无库存交货期 36 周
|
Mouser 零件编号
937-MRF321
|
MACOM
|
射频(RF)双极晶体管 Transistor,20-500MHz,28V,10W
|
|
无库存交货期 36 周
|
|
|
¥1,193.845
|
|
|
¥944.5331
|
|
最低: 1
倍数: 1
|
|
RF Bipolar Transistors
|
Si
|
|
|
|
|
|
|
GaN 场效应晶体管 Transistor,GaN,DC-3000MHz
- NPT25015D
- MACOM
-
1:
¥559.576
-
无库存交货期 26 周
|
Mouser 零件编号
937-NPT25015D
|
MACOM
|
GaN 场效应晶体管 Transistor,GaN,DC-3000MHz
|
|
无库存交货期 26 周
|
|
|
¥559.576
|
|
|
¥414.5744
|
|
|
¥404.5626
|
|
最低: 1
倍数: 1
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
|
|
|
射频(RF)双极晶体管 Transistor,110W,2.7-2.9GHz,100us,10%
- PH2729-110M
- MACOM
-
20:
¥5,029.9577
-
无库存交货期 22 周
|
Mouser 零件编号
937-PH2729-110M
|
MACOM
|
射频(RF)双极晶体管 Transistor,110W,2.7-2.9GHz,100us,10%
|
|
无库存交货期 22 周
|
|
最低: 20
倍数: 20
|
|
RF Bipolar Transistors
|
Si
|
Screw Mount
|
Ceramic-2
|
NPN
|
|
|
|
射频(RF)双极晶体管 Transistor,Bipolar,65W,36V,2.70-2.90GHz
- PH2729-65M
- MACOM
-
20:
¥5,273.5631
-
无库存交货期 28 周
|
Mouser 零件编号
937-PH2729-65M
|
MACOM
|
射频(RF)双极晶体管 Transistor,Bipolar,65W,36V,2.70-2.90GHz
|
|
无库存交货期 28 周
|
|
最低: 20
倍数: 20
|
|
RF Bipolar Transistors
|
Si
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-500MHz 40Watts 28Volt Gain 10dB
- UF2840G
- MACOM
-
20:
¥2,227.0492
-
无库存交货期 26 周
|
Mouser 零件编号
937-UF2840G
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 100-500MHz 40Watts 28Volt Gain 10dB
|
|
无库存交货期 26 周
|
|
最低: 20
倍数: 20
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
319-07
|
N-Channel
|
|
|
|
GaN 场效应晶体管 25W, 4.0GHz, GaN HEMT G28V4 (CG2H40025P)
- CG2H40025P
- MACOM
-
80:
¥1,808.0791
-
无库存交货期 26 周
|
Mouser 零件编号
941-CG2H40025P
|
MACOM
|
GaN 场效应晶体管 25W, 4.0GHz, GaN HEMT G28V4 (CG2H40025P)
|
|
无库存交货期 26 周
|
|
最低: 80
倍数: 80
|
|
GaN FETs
|
GaN
|
|
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT, G28V4, 35W, DC-6.0GHz, PILL
- CG2H40035P
- MACOM
-
70:
¥2,126.9086
-
无库存交货期 26 周
|
Mouser 零件编号
941-CG2H40035P
|
MACOM
|
GaN 场效应晶体管 GaN HEMT, G28V4, 35W, DC-6.0GHz, PILL
|
|
无库存交货期 26 周
|
|
最低: 70
倍数: 70
|
|
GaN FETs
|
GaN
|
|
|
|
|
|
|
GaN 场效应晶体管 45W, 4.0GHz, GaN HEMT G28V4 (CG2H40045P)
- CG2H40045P
- MACOM
-
40:
¥2,899.5461
-
无库存交货期 26 周
|
Mouser 零件编号
941-CG2H40045P
|
MACOM
|
GaN 场效应晶体管 45W, 4.0GHz, GaN HEMT G28V4 (CG2H40045P)
|
|
无库存交货期 26 周
|
|
最低: 40
倍数: 40
|
|
GaN FETs
|
GaN
|
|
|
|
|
|
|
GaN 场效应晶体管 120W, G28V4, 4.0GHz, GaN HEMT, PILL
- CG2H40120P
- MACOM
-
25:
¥4,053.2083
-
无库存交货期 26 周
|
Mouser 零件编号
941-CG2H40120P
|
MACOM
|
GaN 场效应晶体管 120W, G28V4, 4.0GHz, GaN HEMT, PILL
|
|
无库存交货期 26 周
|
|
最低: 25
倍数: 25
|
|
GaN FETs
|
GaN
|
|
|
|
|
|
|
GaN 场效应晶体管 DIE, GAN HEMT, 45W, DC-8.0GHz, G28V4, GP
- CG2H80045D-GP4
- MACOM
-
10:
¥2,021.5587
-
无库存交货期 26 周
|
Mouser 零件编号
941-CG2H80045DGP4
|
MACOM
|
GaN 场效应晶体管 DIE, GAN HEMT, 45W, DC-8.0GHz, G28V4, GP
|
|
无库存交货期 26 周
|
|
最低: 10
倍数: 10
|
|
GaN FETs
|
|
|
|
|
|
|
|
GaN 场效应晶体管 120W, 2.5GHz, 830139F, GaN HEMT, 28V, FL
- CGH25120F
- MACOM
-
1:
¥5,808.2113
-
无库存交货期 26 周
|
Mouser 零件编号
941-CGH25120F
|
MACOM
|
GaN 场效应晶体管 120W, 2.5GHz, 830139F, GaN HEMT, 28V, FL
|
|
无库存交货期 26 周
|
|
|
¥5,808.2113
|
|
|
¥5,808.1322
|
|
最低: 1
倍数: 1
|
|
GaN FETs
|
GaN
|
|
|
|
|
|
|
GaN 场效应晶体管 15W, GaN HEMT, 28V, DC-6.0GHz, Pill
- CGH27015P
- MACOM
-
50:
¥812.583
-
无库存
|
Mouser 零件编号
941-CGH27015P
|
MACOM
|
GaN 场效应晶体管 15W, GaN HEMT, 28V, DC-6.0GHz, Pill
|
|
无库存
|
|
|
¥812.583
|
|
|
¥732.5903
|
|
|
查看
|
|
|
报价
|
|
最低: 50
倍数: 50
|
|
GaN FETs
|
GaN
|
|
|
|
|