IXYS MOSFET

结果: 1,577
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
IXYS MOSFET 96 Amps 200V 0.024 Rds 668库存量
570在途量
最低: 1
倍数: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 96 A 24 mOhms - 20 V, 20 V 5 V 145 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/100A Ultra Junction X2 118库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 100 A 30 mOhms - 30 V, 30 V 2.7 V 180 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFET 120 Amps 250 V 0.24 Ohm Rds 170库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 120 A 24 mOhms - 20 V, 20 V 5 V 185 nC - 55 C + 175 C 700 W Enhancement HiPerFET Tube

IXYS MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A 826库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 360 A 2.9 mOhms - 20 V, 20 V 2.5 V 525 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET 361库存量
最低: 1
倍数: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 150 V 360 A 4 mOhms - 20 V, 20 V 2.5 V 715 nC - 55 C + 175 C 1.67 mW Enhancement HiPerFET Tube

IXYS MOSFET PolarP2 Power MOSFET 806库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 94 A 55 mOhms - 30 V, 30 V 3 V 228 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET TenchP Power MOSFET 2,094库存量
1,450在途量
最低: 1
倍数: 1

Si SMD/SMT D2PAK-3 (TO-263-3) P-Channel 1 Channel 200 V 32 A 130 mOhms - 15 V, 15 V 4 V 180 nC - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFET 24 Amps 500V 0.30 Ohms Rds 295库存量
300在途量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 24 A 300 mOhms - 30 V, 30 V 5 V 160 nC - 55 C + 150 C 400 W Enhancement Tube
IXYS MOSFET 200V, 60A current capacity, Ultra junction X4, TO-247 package, MOSFET 396库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 60 A 21 mOhms - 20 V, 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube

IXYS MOSFET TrenchP Power MOSFET 549库存量
390在途量
最低: 1
倍数: 1

Si Through Hole TO-247-3 P-Channel 1 Channel 200 V 68 A 55 mOhms - 15 V, 15 V 4 V 380 nC - 55 C + 150 C 568 W Enhancement Tube

IXYS MOSFET High Voltage Power MOSFET 270库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 2.5 A 6 Ohms - 30 V, 30 V 5 V 44.5 nC - 55 C + 150 C 110 W Enhancement Tube
IXYS MOSFETs 200V, 120A, Ultra junction X4, TO-220 package, MOSFET

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 120 A 9.5 mOhms - 20 V, 20 V 2.5 V 108 nC - 55 C + 175 C 417 W Enhancement Tube
IXYS MOSFET TenchP Power MOSFET 2,772库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 P-Channel 1 Channel 200 V 32 A 130 mOhms - 15 V, 15 V 4 V 185 nC - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFET TO220 200V 94A N-CH X4CLASS 719库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 94 A 10.6 mOhms - 20 V, 20 V 4.5 V 77 nC - 55 C + 175 C 360 W Enhancement Tube
IXYS MOSFET 170 Amps 100V 0.009 Ohm Rds 1,252库存量
1,170在途量
最低: 1
倍数: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 100 V 170 A 9 mOhms - 20 V, 20 V 5 V 198 nC - 55 C + 175 C 714 W Enhancement Tube
IXYS MOSFET 96 Amps 200V 0.024 Rds 316库存量
最低: 1
倍数: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 96 A 24 mOhms - 20 V, 20 V 2.5 V 145 nC - 55 C + 175 C 600 W Enhancement Tube
IXYS MOSFETs 200V 3.3mohm 400A Ultra Junction X4-Class Power MOSFET in PLUS247

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 400 A 3.3 mOhms 20 V 4.5 V 348 nC - 55 C + 175 C 1.36 kW Enhancement Tube

IXYS MOSFET 650V/64A Power MOSFET 3库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 64 A 51 mOhms - 30 V, 30 V 3 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET 1.4 Amps 1000V 11 Rds 291库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 1.4 A 11 Ohms - 20 V, 20 V 2.5 V 17.8 nC - 55 C + 150 C 63 W Enhancement Tube

IXYS MOSFET 26.0 Amps 600 V 0.27 Ohm Rds 113库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 26 A 270 mOhms - 30 V, 30 V 5 V 72 nC - 55 C + 150 C 460 W Enhancement PolarHV Tube
IXYS MOSFET Polar Power MOSFET 18库存量
最低: 1
倍数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 140 A 20 mOhms - 20 V, 20 V 5 V 185 nC - 55 C + 150 C 1.04 kW Enhancement Polar Tube
IXYS MOSFET 10.0 Amps 600 V 0.74 Ohm Rds 259库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10 A 740 mOhms - 30 V, 30 V 5 V 32 nC - 55 C + 150 C 200 W Enhancement PolarHV Tube

IXYS MOSFET TO247 850V 14A N-CH X3CLASS 219库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 HiPerFET Tube
IXYS MOSFET TO263 150V 42A N-CH TRENCH 124库存量
最低: 1
倍数: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 150 V 42 A 45 mOhms - 30 V, 30 V 2.5 V 21 nC - 55 C + 175 C 200 W Enhancement HiPerFET Tube
IXYS MOSFET TO247 N-CH 75V 140A 26库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 75 V 140 A 11 mOhms - 20 V, 20 V 2 V 275 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube