IXYS X-Class 系列 MOSFET

结果: 36
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数量 RoHS ECAD模型 技术
安装风格
封装 / 箱体
晶体管极性
通道数量
Vds-漏源极击穿电压
Id-连续漏极电流
Rds On-漏源导通电阻
Vgs - 栅极-源极电压
Vgs th-栅源极阈值电压
Qg-栅极电荷
最小工作温度
最大工作温度
Pd-功率耗散
通道模式
商标名
封装
IXYS MOSFETs 1000V 32A TO-268HV Power MOSFET
数据表

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1 kV 32 A 220 mOhms - 30 V, 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET
数据表

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 20 A 330 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET
数据表

Si Through Hole TO-264-3 N-Channel 1 Channel 850 V 50 A 105 mOhms - 30 V, 30 V 3.5 V 152 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET 650V/9A Power MOSFET
数据表
255库存量
最低： 1
倍数： 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 210 mOhms - 30 V, 30 V 3 V 35 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFET TO247 850V 14A N-CH X3CLASS
数据表
219库存量
最低： 1
倍数： 1

Si Through Hole TO-247-3 HiPerFET Tube

IXYS MOSFET 650V/64A Power MOSFET
数据表
3库存量
最低： 1
倍数： 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 64 A 51 mOhms - 30 V, 30 V 3 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET
数据表

Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 20 A 330 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs 1000V 52A PLUS247 Power MOSFET
数据表

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 1 kV 52 A 125 mOhms - 30 V, 30 V 3.5 V 245 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs 1000V 26A TO-268HV Power MOSFET
数据表

Si SMD/SMT TO-268-3 N-Channel 1 Channel 1 kV 8 A 320 mOhms - 30 V, 30 V 3.5 V 113 nC - 55 C + 150 C 860 W Enhancement HiPerFET Tube
IXYS MOSFETs 1000V 32A TO-247 Power MOSFET
数据表

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 32 A 220 mOhms - 30 V, 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET
数据表

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 850 V 20 A 330 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs 850V/14A UlJun XCl
数据表

Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 14 A 550 mOhms - 30 V, 30 V 3.5 V 30 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET
数据表

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 850 V 50 A 105 mOhms - 30 V, 30 V 3.5 V 152 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET TO263 850V 3.5A N-CH XCLASS
数据表
无库存交货期 27 周
最低： 1
倍数： 1

Si SMD/SMT D2PAK-3 (TO-263-3) HiPerFET Tube
IXYS MOSFETs 850V/8A U-Junc X-Cla ss Power MOSFET
数据表

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 850 V 8 A 850 mOhms - 30 V, 30 V 3 V 17 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs 1000V 70A PLUS264 Power MOSFET
数据表

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1 kV 70 A 89 mOhms - 30 V, 30 V 3.5 V 350 nC - 55 C + 150 C 1.785 mW Enhancement HiPerFET Tube
IXYS MOSFETs 850V/90A Ultra Junction X-Class
数据表

Si Through Hole PLUS-264-3 N-Channel 1 Channel 850 V 90 A 41 mOhms - 30 V, 30 V 3.5 V 340 nC - 55 C + 150 C 1.785 kW Enhancement HiPerFET Tube
IXYS MOSFETs 1000V 26A TO-247 Power MOSFET
数据表

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 8 A 320 mOhms - 30 V, 30 V 3.5 V 113 nC - 55 C + 150 C 860 W Enhancement HiPerFET Tube

IXYS MOSFET TO247 850V 30A N-CH XCLASS
数据表
无库存交货期 27 周
最低： 300
倍数： 30

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 30 A 220 mOhms - 30 V, 30 V 3.5 V 68 nC - 55 C + 150 C 695 W Enhancement HiPerFET Tube

IXYS MOSFET TO247 850V 9.5A N-CH XCLASS
数据表
无库存交货期 26 周
最低： 300
倍数： 30

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 9.5 A 360 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 110 W Enhancement HiPerFET Tube
IXYS MOSFETs 52A 1000V POWER MOSFET
数据表

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 52 A 125 mOhms - 30 V, 30 V 3.5 V 245 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET
数据表

Si Through Hole TO-264-3 N-Channel 1 Channel 850 V 66 A 65 mOhms - 30 V, 30 V 3.5 V 230 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET TO220 850V 14A N-CH XCLASS
数据表
无库存交货期 27 周
最低： 300
倍数： 50

Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 14 A 550 mOhms - 30 V, 30 V 3.5 V 30 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFET TO220 850V 4A N-CH XCLASS
数据表
无库存交货期 27 周
最低： 1
倍数： 1

Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 3.5 A 2.5 Ohms - 30 V, 30 V 3 V 7 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 850V/3.5A UlJun XCl HiPerFET Pwr MOSFET
数据表

Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 3.5 A 2.5 Ohms - 30 V, 30 V 3 V 7 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube