2400 MOSFET

结果: 12
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Diodes Incorporated MOSFET MOSFET N-CHANNEL DFN DFN1006-H43 GREEN 3K 5,502库存量
9,000在途量
最低: 1
倍数: 1
: 3,000

Si SMD/SMT X2-DFN1006-3 N-Channel 1 Channel 20 V 750 mA 550 mOhms - 12 V, 12 V 500 mV 500 pC - 55 C + 150 C 470 uW Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET 20V N P Ch 20VDSS 0.45W Low RDSon 10,950库存量
最低: 1
倍数: 1
最大: 4,200
: 3,000

Si SMD/SMT SOT-563-6 N-Channel, P-Channel 2 Channel 20 V 700 mA, 1.03 A 480 mOhms, 970 mOhms - 5 V, 5 V 500 mV 70 pC, 850 pC - 55 C + 150 C 1 W Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET MOSFET,N-CHANNEL 339库存量
最低: 1
倍数: 1
最大: 1,340
: 3,000

Si SMD/SMT SOT-563-6 N-Channel 2 Channel 20 V 1.33 A 480 mOhms - 12 V, 12 V 500 mV 500 pC - 55 C + 150 C 530 mW Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K 3,389库存量
15,000在途量
最低: 1
倍数: 1
最大: 3,140
: 3,000

Si SMD/SMT X1-DFN1006-3 N-Channel 1 Channel 20 V 750 mA 550 mOhms - 12 V, 12 V 500 mV 500 pC - 55 C + 150 C 470 uW Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET Comp Pair Enh FET 20Vds 0.58W 37pF
最低: 1
倍数: 1
: 10,000

Si SMD/SMT SOT-563-6 N-Channel, P-Channel 2 Channel 20 V 700 mA, 1.03 A 300 Ohms, 670 mOhms - 12 V, - 8 V, 8 V, 12 V 500 mV, 1 V 500 pC, 850 pC - 55 C + 150 C 450 mW Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 700V 75A TO247-4 93库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 17 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 700V 75A TO247-4 167库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 17 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 700V 46A TO247-4
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 700V 46A TO247-4 无库存交货期 52 周
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Diodes Incorporated DMC2400UVQ-7
Diodes Incorporated MOSFET MOSFET BVDSS: 8V 24V SOT563 T&R 3K

Si Reel, Cut Tape, MouseReel
Diodes Incorporated DMC2400UVQ-13
Diodes Incorporated MOSFET MOSFET BVDSS: 8V 24V SOT563 T&R 10K

Si Reel, Cut Tape, MouseReel
WeEn Semiconductors OP524,005
WeEn Semiconductors MOSFET OP524/UNCASED/NO MARK CHIPS ON

Si Bulk