References MOSFET

结果: 7
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 封装
Diodes Incorporated MOSFET MOSFET BVDSS: 8V 24V X2-DFN0806-3 T&R 10K
最低: 1
倍数: 1
: 10,000

Si SMD/SMT X2-DFN0806-3 N-Channel 1 Channel 20 V 520 uA 990 mOhms - 8 V, 8 V 1 V 410 pC - 55 C + 150 C 410 mW Enhancement Reel, Cut Tape, MouseReel

Diodes Incorporated MOSFET MOSFET BVDSS: 31V 40V PowerDI5060-8/SWP T&R 2.5K
Si SMD/SMT PowerDI5060-8 N-Channel 2 Channel 40 V 105 A 4.5 mOhms - 20 V, 20 V 4 V 40 nC - 55 C + 175 C 3 W Enhancement Reel

Diodes Incorporated MOSFET MOSFET BVDSS: 31V 40V PowerDI5060-8/SWP T&R 2.5K
Si SMD/SMT PowerDI5060-8 N-Channel 2 Channel 40 V 110 A 4.2 mOhms - 20 V, 20 V 2.5 V 41.9 nC - 55 C + 175 C 2.98 W Enhancement Reel
Diodes Incorporated MOSFET MOSFET BVDSS: 25V 30V PowerDI5060-8/SWP T&R 2.5K
Si SMD/SMT PowerDI5060-8 N-Channel 1 Channel 30 V 150 A 550 uOhms - 20 V, 20 V 3 V 152.7 nC - 55 C + 175 C 2.13 W Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 10K
Si SMD/SMT U-DFN2020-6 N-Channel 1 Channel 30 V 14.1 A 7 mOhms - 20 V, 20 V 3 V 16.7 nC - 55 C + 150 C 800 mW Enhancement Reel

Diodes Incorporated MOSFET MOSFET BVDSS: 31V 40V PowerDI5060-8/SWP T&R 2.5K
Si SMD/SMT PowerDI5060-8 N-Channel 2 Channel 40 V 110 A 4.2 mOhms - 20 V, 20 V 2.5 V 41.9 nC - 55 C + 175 C 3 W Enhancement Reel

Diodes Incorporated MOSFET MOSFET BVDSS: 31V 40V PowerDI5060-8/SWP T&R 2.5K
Si SMD/SMT PowerDI5060-8 N-Channel 2 Channel 40 V 105 A 4.5 mOhms - 20 V, 20 V 4 V 40 nC - 55 C + 175 C 3 W Enhancement Reel