|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
- IMW65R060M2HXKSA1
- Infineon Technologies
-
1:
¥60.6358
-
409库存量
-
新产品
|
Mouser 零件编号
726-IMW65R060M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
|
|
409库存量
|
|
|
¥60.6358
|
|
|
¥35.2334
|
|
|
¥30.1936
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
32.8 A
|
73 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
19 nC
|
- 55 C
|
+ 175 C
|
130 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
- IMW65R010M2HXKSA1
- Infineon Technologies
-
1:
¥171.8052
-
336库存量
-
新产品
|
Mouser 零件编号
726-IMW65R010M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
|
|
336库存量
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
130 A
|
13.1 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
112 nC
|
- 55 C
|
+ 175 C
|
440 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V G2
- IMTA65R033M2HXTMA1
- Infineon Technologies
-
1:
¥78.5011
-
1,716库存量
-
新产品
|
Mouser 零件编号
726-IMTA65R033M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V G2
|
|
1,716库存量
|
|
|
¥78.5011
|
|
|
¥55.4152
|
|
|
¥46.2396
|
|
|
¥42.1829
|
|
|
¥38.4652
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
PG-LHSOF-4
|
N-Channel
|
|
650 V
|
68 A
|
41 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
- IMW65R033M2HXKSA1
- Infineon Technologies
-
1:
¥87.0213
-
247库存量
-
新产品
|
Mouser 零件编号
726-IMW65R033M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
|
|
247库存量
|
|
|
¥87.0213
|
|
|
¥51.867
|
|
|
¥48.3866
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
53 A
|
41 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
194 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
- IMZA65R010M2HXKSA1
- Infineon Technologies
-
1:
¥198.0212
-
10库存量
-
240在途量
-
新产品
|
Mouser 零件编号
726-IMZA65R010M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
|
|
10库存量
240在途量
|
|
|
¥198.0212
|
|
|
¥158.5616
|
|
|
¥137.1481
|
|
|
¥137.0577
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
144 A
|
13.1 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
112 nC
|
- 55 C
|
+ 175 C
|
440 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
- IMW65R026M2HXKSA1
- Infineon Technologies
-
1:
¥100.3327
-
101库存量
-
新产品
|
Mouser 零件编号
726-IMW65R026M2HXKSA
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
|
|
101库存量
|
|
|
¥100.3327
|
|
|
¥60.5454
|
|
|
¥58.3193
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
64 A
|
33 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
- IMZA65R026M2HXKSA1
- Infineon Technologies
-
1:
¥104.3103
-
18库存量
-
新产品
|
Mouser 零件编号
726-IMZA65R026M2HXKS
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
|
|
18库存量
|
|
|
¥104.3103
|
|
|
¥73.3709
|
|
|
¥63.6868
|
|
|
¥60.0482
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
64 A
|
33 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
- IMTA65R026M2HXTMA1
- Infineon Technologies
-
1:
¥98.762
-
-
新产品
|
Mouser 零件编号
726-IMTA65R026M2HXTM
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 750 V G2
|
|
|
|
|
¥98.762
|
|
|
¥68.3198
|
|
|
¥55.4152
|
|
|
¥51.867
|
|
|
¥46.3187
|
|
最低： 1
倍数： 1
:
2,000
|
|
|
SMD/SMT
|
PG-LHSOF-4
|
N-Channel
|
|
650 V
|
79 A
|
33 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
357 W
|
Enhancement
|
CoolSiC
|
|
