IXYS 1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT High Speed IGBTs feature high current ratings (105A to 160A, Tc = 25°C) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50kHz. IXYS 1200V XPT High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT High Speed IGBTs and a reduced PCB layout area.
Features
- Optimized for low switching losses
- Square RBSOA
- Positive thermal coefficient of VCE(sat)
- Avalanche rated
- High current handling capability
- International standard package
- High power density
- Low gate drive requirements
Applications
- High frequency power inverters
- UPS
- Motor drives
- SMPS
- PFC circuits
- Battery chargers
- Welding machines
- Lamp ballasts
Related IGBT
Littelfuse 1200V Trench XPT™ IGBT（带Sonic二极管）
采用XPT薄晶圆技术和沟槽式IGBT工艺以及反向并联Sonic二极管进行开发。
| 物料编号 | 封装 / 箱体 | 集电极—发射极最大电压 VCEO | 在25 C的连续集电极电流 | 集电极—射极饱和电压 | 数据表 |
|---|---|---|---|---|---|
| IXYH30N120C3D1 | TO-247AD-3 | 1.2 kV | 66 A | 3.3 V |  |
| IXYH50N120C3D1 | TO-247AD-3 | 1.2 kV | 90 A | 3.5 V | |
| IXYH40N120C3D1 | TO-247AD-3 | 1.2 kV | 80 A | 3.5 V | |
| IXYH82N120C3 | TO-247AD-3 | 1.2 kV | 200 A | 3.2 V | |
| IXYB82N120C3H1 | TO-264-3 | 1.2 kV | 164 A | 3.2 V | |
| IXYX100N120C3 | TO-247-PLUS-3 | 1.2 kV | 195 A | 3.5 V | |
| IXYH50N120C3 | TO-247AD-3 | 1.2 kV | 100 A | 3.5 V | |
| IXYN100N120C3 | SOT-227B-4 | 1.2 kV | 160 A | 3.5 V | |
| IXYN82N120C3H1 | SOT-227B-4 | 1.2 kV | 105 A | 3.2 V | |
| IXYP30N120C3 | TO-220-3 | 1.2 kV | 75 A | 3.3 V | |