Navitas Semiconductor NV60x GaNFast™ Power FETs

Navitas Semiconductor NV60x GaNFast™ Power FETs are high‑performance enhancement‑mode GaN power devices engineered for fast‑switching, high‑efficiency power systems. These FETs feature ultra‑low gate charge, zero reverse‑recovery behavior, and minimized output charge, enabling high‑frequency operation up to 10MHz across the series. The Navitas Semiconductor NV60x supports 700V continuous and 800V transient drain‑to‑source voltages, providing robust headroom for demanding AC‑DC, DC‑DC, and DC‑AC topologies.

Devices such as the NV6012C offer a low 430mΩ resistance in a compact 5mm × 6mm PQFN package, with bottom‑side cooling and a Source‑Kelvin pin for improved noise immunity, while the NV6014 and NV6015C offer lower RDS(on) performance to 260mΩ and 150mΩ respectively, supporting higher power densities with similarly compact packaging. The NV6017C further reduces on‑resistance to 120mΩ, delivering up to 13A continuous drain current at +25°C and maintaining low thermal resistance for efficient heat dissipation.

Across the NV60x family, the combination of high dV/dt immunity (up to 200V/ns), low‑profile SMT packages, and bottom‑side cooling enables designers to develop smaller, cooler, and more efficient power systems for applications such as wireless charging, LED lighting, solar micro‑inverters, industrial power conversion, and telecom/server supplies.

Features

  • eMode GaN power FET
  • Low 120mΩ to 430mΩ resistance range
  • 10MHz switching frequency capability
  • Ultra-low gate charge
  • Zero reverse recovery charge
  • Low output charge
  • 800V transient voltage rating
  • 650V or 700V continuous voltage rating
  • Source Kelvin (SK) pin for gate noise immunity
  • Minimized package inductance
  • Low thermal resistance
  • Bottom-side cooled
  • Small 5mm x 6mm, low-profile SMT PQFN package
  • Lead-free, RoHS and REACH compliant

Applications

  • AC-DC, DC-DC, and DC-AC
  • QR flyback, ACF, buck, boost, half bridge, full bridge, LLC resonant, Class D, and PFCs
  • Wireless power
  • LED lighting
  • Solar micro-inverters
  • TV switch-mode power supplies (SMPS)
  • Servers and Telecom

Specifications

  • 800V maximum transient drain-to-source voltage
  • -7V to 650V or 700V maximum continuous drain-to-source voltage range
  • -10V to 7V maximum continuous gate-to-source voltage range
  • -20V to 10V maximum transient gate-to-source voltage range
  • 2.7A to 13A maximum continuous drain current range at +25°C
  • 5.4A to 26A maximum pulsed drain current range
  • 200V/ns maximum slew rate on drain-to-source
  • -55°C to +150°C operating juunction temperature range
  • Thermal resistance ranges
    • 1.7°C/W to 4.93°C/W junction-to-case
    • 40°C/W to 45°C/W junction-to-ambient

Diagrams

Schematic - Navitas Semiconductor NV60x GaNFast™ Power FETs
发布日期: 2026-02-17 | 更新日期: 2026-02-25