Nisshinbo NJG1816K75-TE1超低电流SPDT开关

Nisshinbo NJG1816K75-TE1超低电流SPDT开关是一种适用于LPWA应用的2位控制SPDT开关GaAs单片微波集成电路 (MMIC) 。该开关在1.6V起的低控制电压下工作,由于超低的电流消耗,非常适合电池供电的物联网设备。NJG1816K75-TE1超低消耗电流SPDT开关的工作温度范围介于-55°C至150°C,存储温度介于-40°C至105°C。该开关符合RoHS标准且无卤素,典型应用包括天线开关、路径开关和一般开关应用。

Nisshinbo NJG1816K75-TE1 Ultra Low Current SPDT Switch is a 2-bit control SPDT switch GaAs Monolithic Microwave Integrated Circuit (MMIC) suited for LPWA applications. This switch operates at low control voltage from 1.6V and is ideal for IoT devices with battery operation because of ultra-low current consumption. The NJG1816K75-TE1 ultra-low current SPDT switch is operated at -55°C to 150°C temperature range and stored at -40°C to 105°C temperature range. This switch is RoHS compliant and halogen-free. Typical applications include antenna switching, path switching, and general-purpose switching applications.

Nisshinbo NJG1817ME4-TE1 10W High Power SPDT Switch offers a high power handling capability of 40dBm. This SPDT switch also offers high linearity and low insertion loss up to 6GHz. The high-power SPDT switch features a high switching speed capable of 5G communications. This high-power SPDT switch operates from 2V to 5V of control voltage range and 150ns typical high switching speed. The NJG1817ME4 switch is RoHS compliant and halogen-free with MSL1. This high-power SPDT switch is suitable for commercial radio applications and transmits/receives switching, antenna switching, and other switching applications.

Nisshinbo NJG1817ME4-TE1 10W High Power SPDT Switch offers a high power handling capability of 40dBm. This SPDT switch also offers high linearity and low insertion loss up to 6GHz. The high-power SPDT switch features a high switching speed capable of 5G communications. This high-power SPDT switch operates from 2V to 5V of control voltage range and 150ns typical high switching speed. The NJG1817ME4 switch is RoHS compliant and halogen-free with MSL1. This high-power SPDT switch is suitable for commercial radio applications and transmits/receives switching, antenna switching, and other switching applications.

特性

  • 射频输入功率:30dBm 
  • 控制电压:4.5V 
  • 功耗:380mW 
  • 存储温度范围:-40°C至105°C 
  • 工作温度范围:-55°C至150°C 
  • 低电流消耗:0.1μA(典型值) 
  • f=920MHz时的低插入损耗:0.45dB(典型值)
  • f=920MHz时的高隔离:30dB(典型值)
  • 最低低控制电压:1.6V 
  • f=920MHz时的P-0.1dB:30dBm(典型值)
  • 封装尺寸:1mm x 1mm x 1mm 
  • 符合RoHS标准,无卤素,湿气敏感性等级MSL1
  • DFN6-75封装

应用

  • 天线开关
  • 路径开关
  • 一般开关
  • LPWA(SIGFOX、LoRaWAN和Wi-SUN)

视频

NJG1815K75 Block Diagram

框图 - Nisshinbo NJG1816K75-TE1超低电流SPDT开关

框图

框图 - Nisshinbo NJG1816K75-TE1超低电流SPDT开关

NJG1817ME4-TE1 Block Diagram

框图 - Nisshinbo NJG1816K75-TE1超低电流SPDT开关
发布日期: 2021-10-13 | 更新日期: 2024-07-12