CA 碳化硅MOSFET

结果: 1,322
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 375库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 40 A 80 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 142 W Enhancement CoolSiC
APC-E 碳化硅MOSFET 650V 50mR, TO-247-4L, Industrial Grade 288库存量
最低: 1
倍数: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 24库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 220 A 9 mOhms - 7 V, + 23 V 5.6 V 164 nC - 55 C + 175 C 789 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 130库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 50 A 41.3 mOhms - 7 V, 23 V 5.6 V 37 nC - 55 C + 175 C 189 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 148库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 29 A 78 mOhms - 7 V, 23 V 5.6 V 20 nC - 55 C + 175 C 116 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 56库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
APC-E 碳化硅MOSFET 1200V 75mR, TO-247-4L, Automotive Grade 290库存量
最低: 1
倍数: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
Infineon Technologies 碳化硅MOSFET Automotive SiC MOSFET, 750 V 25库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 60 A 31 mOhms - 7 V, + 23 V 5.6 V 49 nC - 55 C + 175 C 202 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 114库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 53 A 41.3 mOhms - 7 V, + 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
APC-E 碳化硅MOSFET 650V 50mR, TO-247-4L, Automotive Grade 270库存量
最低: 1
倍数: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2 31库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 86 A 25 mOhms -7 V to + 23 V 4.5 V 59 nC - 55 C + 175 C 340 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 30库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 128库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 64 A 31 mOhms - 7 V, 23 V 5.6 V 49 nC - 55 C + 175 C 234 W Enhancement CoolSiC
IXYS 碳化硅MOSFET 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L 87库存量
最低: 1
倍数: 1
: 450

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 65 A 52 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 375 W Enhancement
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 70库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
IXYS 碳化硅MOSFET 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L 88库存量
最低: 1
倍数: 1
: 800

SMD/SMT TO-263-7L N-Channel 1 Channel 1.2 kV 65 A 53 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 417 W Enhancement
APC-E 碳化硅MOSFET 1200V 75mR, TO-247-4L, Industrial Grade 262库存量
最低: 1
倍数: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 160库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 42 A 50 mOhms - 7 V, 23 V 5.6 V 30 nC - 55 C + 175 C 156 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 600库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 357 A 5 mOhms - 7 V to + 23 V 5.6 V 342 nC - 55 C + 175 C 1.499 kW Enhancement CoolSiC
Central Semiconductor 碳化硅MOSFET 1700V Through-Hole MOSFET N-Channel SiC 27库存量
30在途量
最低: 1
倍数: 1
Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 26 A 40 mOhms 20 V 2.4 V - 55 C + 175 C 28 W Depletion
onsemi 碳化硅MOSFET 750V/18MOSICFETG4TO263 1,209库存量
800在途量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET

onsemi 碳化硅MOSFET SIC MOSFET 900V TO247-4L 20MOHM 2,239库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 484 W Enhancement EliteSiC
APC-E 碳化硅MOSFET 1700V 1000mR, TO247-3L, Industrial Grade 300库存量
300在途量
最低: 1
倍数: 1

Through Hole TO-247-3 1.7 kV 6.8 A 1 kOhms 20 V + 175 C


Diodes Incorporated 碳化硅MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS 35库存量
最低: 1
倍数: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement


Diodes Incorporated 碳化硅MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS 50库存量
最低: 1
倍数: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement