IXYS MOSFET

结果: 1,576
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装

IXYS MOSFET 26 Amps 1200V 1 Rds 614库存量
660在途量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 20 A 570 mOhms - 30 V, 30 V 3.5 V 193 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube

IXYS MOSFET Polar HiperFET Power MOSFET 294库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 40 A 210 mOhms - 30 V, 30 V 6.5 V 230 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFET 1.4 Amps 1000V 11 Rds 473库存量
最低: 1
倍数: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 1.4 A 11 Ohms - 20 V, 20 V 4.5 V 17.8 nC - 55 C + 150 C 63 W Enhancement Tube
IXYS MOSFET TenchP Power MOSFET 413库存量
最低: 1
倍数: 1

Si SMD/SMT D2PAK-3 (TO-263-3) P-Channel 1 Channel 50 V 48 A 30 mOhms Tube
IXYS MOSFET 0.6 Amps 1200V 32 Rds 291库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 600 mA 30 Ohms - 20 V, 20 V 2 V 13.3 nC - 55 C + 150 C 42 W Enhancement Tube
IXYS MOSFET 76 Amps 250V 39 Rds 248库存量
最低: 1
倍数: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 300 V 76 A 42 mOhms - 20 V, 20 V 5 V 92 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube

IXYS MOSFET 300V 52A 81库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 52 A 60 mOhms - 20 V, 20 V 2 V 150 nC - 55 C + 150 C 360 W Enhancement HiPerFET Tube
IXYS MOSFET 14 Amps 600V 0.19 Rds 19库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15 A 190 mOhms - 20 V, 20 V 3.9 V 87 nC - 55 C + 150 C 125 W Enhancement CoolMOS Tube
IXYS MOSFET IXTA60N10T TRL 729库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 60 A 18 mOhms - 20 V, 20 V 2.5 V 49 nC - 55 C + 175 C 176 W Enhancement Trench Reel, Cut Tape

IXYS MOSFET 1500 V High Voltage Power MOSFET 47库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 20 A 1 Ohms - 30 V, 30 V 4.5 V 215 nC - 55 C + 150 C 1.25 kW Enhancement Tube
IXYS MOSFET 650V 100mohm 34A X2-Class HiPerFET in TO-247 584库存量
300在途量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 100 mOhms 30 V 5 V 64 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFET 650V 69mohm 46A X2-Class HiPerFET in TO-247 551库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 69 mOhms 30 V 5.5 V 90 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFET 650V 100mohm 34A X2-Class HiPerFET in TO-220 600库存量
600在途量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 100 mOhms 30 V 5 V 64 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFET 650V X2 MOSFET boost leg in ISOPLUS i4 pak 240库存量
最低: 1
倍数: 1

Si Through Hole ISOPLUS-i4-PAC-5 N-Channel 1 Channel 650 V 18 A 160 mOhms - 40 V, 40 V 5 V 37 nC - 40 C + 125 C Enhancement ISOPLUS Tube

IXYS MOSFET HiPERFET Id26 BVdass500 3,473库存量
5,400在途量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 26 A 230 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube

IXYS MOSFET TRENCHT2 HIPERFET PWR MOSFET 100V 320A 1,664库存量
840在途量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 320 A 3.5 mOhms - 20 V, 20 V 4 V 430 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube

IXYS MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET 3,324库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 60 A 100 mOhms - 30 V, 30 V 5 V 96 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET 1,604库存量
最低: 1
倍数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 64 A 95 mOhms - 30 V, 30 V 5 V 145 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube
IXYS MOSFET TO268 300V 120A N-CH X3CLASS 2,290库存量
750在途量
最低: 1
倍数: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 120 A 11 mOhms - 20 V, 20 V 4.5 V 170 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube
IXYS MOSFET Trench T2 HiperFET Power MOSFET 1,617库存量
600在途量
最低: 1
倍数: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 100 V 320 A 3.5 mOhms - 20 V, 20 V 4 V 430 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFET TrenchT2 HiperFETs Power MOSFET 134库存量
90在途量
最低: 1
倍数: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 75 V 400 A 2.3 mOhms - 20 V, 20 V 2 V 420 nC - 55 C + 175 C 1 mW Enhancement HiPerFET Tube

IXYS MOSFET 64.0 Amps 500 V 0.09 Ohm Rds 1,228库存量
930在途量
最低: 1
倍数: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 500 V 64 A 85 mOhms - 30 V, 30 V 3 V 150 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFET TO263 500V 10A P-CH POLAR 3,716库存量
最低: 1
倍数: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) P-Channel 1 Channel 500 V 10 A 1 Ohms - 20 V, 20 V 2 V 50 nC - 55 C + 150 C 300 W Enhancement PolarP Reel, Cut Tape, MouseReel
IXYS MOSFET -120 Amps -65V 0.01 Rds 7,160库存量
2,350在途量
最低: 1
倍数: 1

Si SMD/SMT D2PAK-3 (TO-263-3) P-Channel 1 Channel 65 V 120 A 10 mOhms - 15 V, 15 V 2 V 185 nC - 55 C + 150 C 298 W Enhancement TrenchP Tube

IXYS MOSFET 12 Amps 1000V 1.3 Ohms Rds 984库存量
330在途量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 12 A 1.3 Ohms - 30 V, 30 V 3.5 V 155 nC - 55 C + 150 C 400 W Enhancement Tube