IXYS MOSFET

结果: 1,577
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
IXYS MOSFET TO247 650V 80A N-CH X2CLASS 239库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 2.7 V 137 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET -10.0 Amps -500V 1.000 Rds 488库存量
530在途量
最低: 1
倍数: 1

Si Through Hole TO-3P-3 P-Channel 1 Channel 500 V 10 A 1 Ohms - 20 V, 20 V 4.5 V 50 nC - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFET 40 Amps 500V 388库存量
最低: 1
倍数: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 40 A 170 mOhms - 20 V, 20 V 4.5 V 320 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube
IXYS MOSFET -170.0 Amps -100V 0.012 Rds 226库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 P-Channel 1 Channel 100 V 170 A 12 mOhms - 20 V, 20 V 4 V 240 nC - 55 C + 150 C 890 W Enhancement Tube

IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A 262库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 18 A 660 mOhms - 30 V, 30 V 3.5 V 90 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/60A Ultra Junction X2 879库存量
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 60 A 52 mOhms - 30 V, 30 V 2.7 V 107 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube
IXYS MOSFET PolarHT HiperFET 100v, 170A 1,383库存量
331在途量
最低: 1
倍数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 170 A 9 mOhms - 20 V, 20 V 5 V 198 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 80A 398库存量
最低: 1
倍数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 80 A 65 mOhms - 30 V, 30 V 3 V 197 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A 236库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 420 A 2.6 mOhms - 20 V, 20 V 5 V 670 nC - 55 C + 175 C 1.67 kW Enhancement HiPerFET Tube
IXYS MOSFET TO252 200V 36A N-CH X3CLASS 1,702库存量
1,820在途量
最低: 1
倍数: 1

Si SMD/SMT TO-252-3 N-Channel 1 Channel 200 V 36 A 38 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFET TO263 150V 44A P-CH TRENCH 1,194库存量
800预期 2026/5/5
最低: 1
倍数: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) P-Channel 1 Channel 150 V 44 A 65 mOhms - 15 V, 15 V 2 V 175 nC - 55 C + 150 C 298 W Enhancement TrenchP Reel, Cut Tape, MouseReel
IXYS MOSFET TO247 3KV 2A N-CH POLAR 296库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 3 kV 2 A 21 Ohms - 20 V, 20 V 3 V 73 nC - 55 C + 150 C 520 W Enhancement Polar3 Tube

IXYS MOSFET 40 Amps 500V 510库存量
740在途量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 40 A 170 mOhms - 20 V, 20 V 4.5 V 320 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube

IXYS MOSFET -8 Amps -500V 1.2 Rds 780库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 P-Channel 1 Channel 500 V 8 A 1.2 Ohms - 20 V, 20 V 5 V 130 nC - 55 C + 150 C 180 W Enhancement Tube
IXYS MOSFET 1700V 2A 119库存量
300在途量
最低: 1
倍数: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.7 kV 2 A 6.5 Ohms - 20 V, 20 V 4.5 V 110 nC - 55 C + 150 C 568 W Depletion Tube

IXYS MOSFET LINEAR L2 SERIES MOSFET 200V 110A 282库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 110 A 24 mOhms - 20 V, 20 V 4.5 V 500 nC - 55 C + 150 C 960 W Enhancement Linear L2 Tube

IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 287库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 20 A 330 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET 343库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 145 mOhms - 30 V, 30 V 5 V 94 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube

IXYS MOSFET 250V/80A Ultra Junct ion X3-Class MOSFET 364库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 80 A 16 mOhms - 20 V, 20 V 2.5 V 83 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 371库存量
最低: 1
倍数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 850 V 50 A 105 mOhms - 30 V, 30 V 3.5 V 152 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 64A 389库存量
最低: 1
倍数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 64 A 85 mOhms - 30 V, 30 V 3 V 150 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 16A 1,727库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 16 A 400 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFET MOSFET 650V/22A Ultra Junction X2 729库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET 3 Amps 1200V 4.50 Rds 442库存量
150在途量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms - 20 V, 20 V 5 V 39 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube

IXYS MOSFET PLUS247 250V 240A N-CH X3CLASS 232库存量
最低: 1
倍数: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 250 V 240 A 5 mOhms - 20 V, 20 V 2.5 V 345 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube