Infineon 碳化硅MOSFET

结果: 297
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名
Infineon Technologies SiC MOSFETs SiC MOSFET, 750 V

Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 40 A 80 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 142 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET Automotive SiC MOSFET, 750 V 25库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 60 A 31 mOhms - 7 V, + 23 V 5.6 V 49 nC - 55 C + 175 C 202 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 100库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 53 A 41.3 mOhms - 7 V, + 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 220 A 9 mOhms - 7 V, + 23 V 5.6 V 164 nC - 55 C + 175 C 789 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 130库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 50 A 41.3 mOhms - 7 V, 23 V 5.6 V 37 nC - 55 C + 175 C 189 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 148库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 29 A 78 mOhms - 7 V, 23 V 5.6 V 20 nC - 55 C + 175 C 116 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 49库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2 35库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 86 A 25 mOhms -7 V to + 23 V 4.5 V 59 nC - 55 C + 175 C 340 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 30库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 128库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 64 A 31 mOhms - 7 V, 23 V 5.6 V 49 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 70库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 160库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 42 A 50 mOhms - 7 V, 23 V 5.6 V 30 nC - 55 C + 175 C 156 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 648库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 357 A 5 mOhms - 7 V to + 23 V 5.6 V 342 nC - 55 C + 175 C 1.499 kW Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SIC_DISCRETE 1,330库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 27 A 80 mOhms - 20 V, + 20 V 4.5 V - 55 C + 175 C 714 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SIC_DISCRETE 781库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 60 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 175 C 150 mW Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 651库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 47 A 45 mOhms - 7 V, + 20 V 5.1 V 46 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 329库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 36 A 83 mOhms - 7 V, + 20 V 5.1 V 34 nC - 55 C + 175 C 181 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 817库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 6 A 346 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 175 C 65 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2 744库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 840 V 198 A 9 mOhms - 7 V, + 23 V 5.6 V 169 nC - 55 C + 175 C 651 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2 752库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 64 A 31 mOhms - 7 V, + 23 V 5.6 V 49 nC - 55 C +175 C 234 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 152库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 198 A 9 mOhms - 7 V, 23 V 5.6 V 169 nC - 55 C + 175 C 651 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 1,184库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 34 A 65 mOhms - 7 V, 23 V 5.6 V 24 nC - 55 C + 175 C 135 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 840库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 798库存量
最低: 1
倍数: 1
: 2,000

TOLL-8 650 V 75 mOhms
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 80 A 23 mOhms - 10 V, + 25 V 5.1 V 73 nC - 40 C + 175 C 356 W Enhancement