碳化硅MOSFET

 碳化硅MOSFET
SiC MOSFETs are available at Mouser Electronics from industry leading manufacturers. Mouser is an authorized distributor for many SiC MOSFET manufacturers including Infineon, Microchip, Navitas Semiconductor, onsemi, ROHM Semiconductor, STMicroelectronics, Wolfspeed & more. Please view our large selection of SiC MOSFETs below.
结果: 1,298
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名
onsemi 碳化硅MOSFET 650V/80MOSICFETG3TO263 1,255库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET


Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 739库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 17 A 217 mOhms - 5 V, + 23 V 5.7 V 27 nC - 55 C + 175 C 85 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SIC_DISCRETE 282库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 52 A 35 mOhms - 7 V, + 23 V 4.5 V 59 nC - 55 C + 175 C 228 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SIC_DISCRETE 192库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 33 A 80 mOhms - 7 V, + 20 V 5.7 V 28 nC - 55 C + 175 C 150 mW Enhancement CoolSiC
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 31A N-CH SIC 150库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
onsemi 碳化硅MOSFET 650V/80MOSICFETG3TO263 434库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
Infineon Technologies 碳化硅MOSFET SIC_DISCRETE 829库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 52 A 59 mOhms - 7 V, + 20 V 5.7 V 57 nC - 55 C + 175 C 228 W Enhancement CoolSiC


Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 3,984库存量
2,000在途量
最低: 1
倍数: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 39 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 161 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 360库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 50 A 50 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 176 W Enhancement
Microchip Technology 碳化硅MOSFET MOSFET SIC 1200 V 40 mOhm TO-268 44库存量
最低: 1
倍数: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 1.2 kV 64 A 50 mOhms - 10 V, + 23 V 1.8 V 137 nC - 55 C + 175 C 303 W Enhancement
Infineon Technologies 碳化硅MOSFET Automotive SiC MOSFET, 750 V 4库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 72 A 25 mOhms - 7 V, + 23 V 5.6 V 59 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET Automotive SiC MOSFET, 750 V 25库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 32 A 65 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 122 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET Automotive SiC MOSFET, 750 V 25库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 40 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 142 W Enhancement CoolSiC
SemiQ 碳化硅MOSFET 1200V, 80mOhm, TO-263-7L MOSFET 6库存量
最低: 1
倍数: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 35 A 77 mOhms - 10 V, + 25 V 4 V 53 nC - 55 C + 175 C 188 W Enhancement
Infineon Technologies 碳化硅MOSFET CoolSiC Automotive Power Device 750 V G2 760库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 840 V 198 A 9 mOhms - 7 V, + 23 V 5.6 V 169 nC - 55 C + 175 C 651 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 160库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 198 A 9 mOhms - 7 V, 23 V 5.6 V 169 nC - 55 C + 175 C 651 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET 750 V G2 1,184库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 34 A 65 mOhms - 7 V, 23 V 5.6 V 24 nC - 55 C + 175 C 135 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 840库存量
最低: 1
倍数: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 798库存量
最低: 1
倍数: 1
: 2,000

TOLL-8 650 V 75 mOhms
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 240库存量
最低: 1
倍数: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 80 A 23 mOhms - 10 V, + 25 V 5.1 V 73 nC - 40 C + 175 C 356 W Enhancement
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 240库存量
最低: 1
倍数: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 171 W Enhancement
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 240库存量
最低: 1
倍数: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 250 W Enhancement
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 500库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 172 A 9 mOhms - 7 V, + 23 V 5.6 V 169 nC - 55 C + 175 C 483 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 500库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 116 A 13.8 mOhms - 7 V, + 23 V 5.6 V 106 nC - 55 C + 175 C 333 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 500库存量
最低: 1
倍数: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 85 A 20 mOhms - 7 V, + 23 V 5.6 V 74 nC - 55 C + 175 C 263 W Enhancement CoolSiC