STMicroelectronics 绝缘栅双极晶体管(IGBT)

结果: 203
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STMicroelectronics 绝缘栅双极晶体管(IGBT) 600V 60A Trench Gate 1.8V Vce IGBT 258库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60V60F Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 8 A low loss 343库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) 19A 600V Very Fast IGBT Ultrafast Diode 336库存量
最低: 1
倍数: 1

Si TO-247 Through Hole Single 600 V 1.8 V - 20 V, 20 V 52 A 208 W - 55 C + 150 C STGWA19NC60HD Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l 915库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long 402库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 50 A 167 W - 55 C + 175 C Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 40 A high speed HB series IGBT 397库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGWA40H65DFB Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long 495库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 72 A 227 W - 55 C + 175 C STGWA40HP65FB2 Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 40 A low loss 158库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long 662库存量
600在途量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 86 A 272 W - 55 C + 175 C HB2 Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, HB series 650 V, 60 A high speed 601库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 650 V 2 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGWA60H65DFB Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 20 A high speed HB series IGBT 464库存量
最低: 1
倍数: 1

Si TO-3P Through Hole Single 650 V 1.55 V - 20 V, 20 V 40 A 168 W - 55 C + 175 C STGWT20H65FB Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) 1250V 20A trench gte field-stop IGBT 613库存量
最低: 1
倍数: 1

Si TO-3P Through Hole Single 1.25 kV 2.55 V - 20 V, 20 V 40 A 259 W - 55 C + 175 C STGWT20IH125DF Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 40 A high-speed HB series IGBT 848库存量
最低: 1
倍数: 1

Si TO-3P-3 Through Hole Single 650 V 1.6 V - 30 V, 30 V 80 A 283 W - 55 C + 175 C STGWT40HP65FB Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) 650V 60A HSpd trench gate field-stop IGBT 287库存量
最低: 1
倍数: 1

Si TO-3P Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGWT60H65DFB Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT in a Max247 long l 193库存量
最低: 1
倍数: 1

Si MAX257-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 150 A 750 W - 55 C + 175 C Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) 600V 20A Hi Spd TrenchGate FieldStop 181库存量
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 600 V 1.8 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGW20V60F Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) PowerMESH TM IGBT
1,000在途量
最低: 1
倍数: 1
: 1,000

Si D2PAK-3 SMD/SMT Single 600 V 2.7 V - 20 V, 20 V 15 A 62.5 W - 55 C + 150 C STGB6NC60HDT4 Reel, Cut Tape, MouseReel
STMicroelectronics 绝缘栅双极晶体管(IGBT) 600V 30A High Speed Trench Gate IGBT
1,000在途量
最低: 1
倍数: 1

Si TO-220-3 Through Hole Single 600 V 2.4 V - 20 V, 20 V 60 A 260 W - 40 C + 175 C STGP30H60DF Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT ACEPACK SMIT
最低: 1
倍数: 1
: 200

Si ACEPACK-9 SMD/SMT Dual 1.2 kV 2.2 V 20 V 69 A 536 W - 55 C + 175 C Reel, Cut Tape, MouseReel
STMicroelectronics 绝缘栅双极晶体管(IGBT) 19 A - 600 V Very fast IGBT
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 600 V 2 V - 20 V, 20 V 42 A 140 W - 55 C + 150 C STGW19NC60HD Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 326 W - 55 C + 175 C M Tube

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 600 V, 30 A high speed HB series IGBT
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 600 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGW30H60DFB Tube


STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 pac
最低: 1
倍数: 1

Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 115 A 357 W - 55 C + 175 C Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
最低: 1
倍数: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube


STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 40 A high speed HB series IGBT 290库存量
最低: 1
倍数: 1

Si TO-3PF Through Hole Single 650 V 2 V - 20 V, 20 V 80 A 62.5 W - 55 C + 175 C STGFW40H65FB