|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
¥241.1985
-
1,597库存量
|
Mouser 零件编号
511-SCTL90N65G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597库存量
|
|
|
¥241.1985
|
|
|
¥184.5403
|
|
|
¥184.0431
|
|
|
¥183.964
|
|
|
¥172.3024
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
18 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 175 C
|
935 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
¥132.5151
-
2,319库存量
|
Mouser 零件编号
511-SCTL35N65G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,319库存量
|
|
|
¥132.5151
|
|
|
¥93.6318
|
|
|
¥86.106
|
|
|
¥86.0269
|
|
|
¥82.7951
|
|
|
¥80.3995
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
67 mOhms
|
- 10 V, + 22 V
|
5 V
|
73 nC
|
- 55 C
|
+ 175 C
|
417 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
¥93.6318
-
969库存量
|
Mouser 零件编号
511-SCT040H65G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
969库存量
|
|
|
¥93.6318
|
|
|
¥63.6077
|
|
|
¥54.7598
|
|
|
¥54.6807
|
|
|
¥51.2003
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
40 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
39.5 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
¥142.267
-
570库存量
|
Mouser 零件编号
511-SCTW40N120G2VAG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
570库存量
|
|
|
¥142.267
|
|
|
¥88.253
|
|
|
¥88.0948
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTW70N120G2V
- STMicroelectronics
-
1:
¥269.2451
-
714库存量
|
Mouser 零件编号
511-SCTW70N120G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
|
|
714库存量
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
21 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
¥166.0987
-
5库存量
-
新产品
|
Mouser 零件编号
511-SCT019HU120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
5库存量
|
|
|
¥166.0987
|
|
|
¥136.6509
|
|
|
¥118.198
|
|
|
¥104.4685
|
|
最低： 1
倍数： 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
- SCTW90N65G2V
- STMicroelectronics
-
1:
¥213.8186
-
45库存量
|
Mouser 零件编号
511-SCTW90N65G2V
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
|
|
45库存量
|
|
|
¥213.8186
|
|
|
¥191.2412
|
|
|
¥167.3304
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
90 A
|
25 mOhms
|
- 10 V, + 22 V
|
1.9 V
|
157 nC
|
- 55 C
|
+ 200 C
|
390 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
¥171.5566
-
637库存量
-
新产品
|
Mouser 零件编号
511-SCT012W90G3-4AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
637库存量
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
¥192.8119
-
832库存量
-
新产品
|
Mouser 零件编号
511-SCT016H120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
832库存量
|
|
|
¥192.8119
|
|
|
¥139.5437
|
|
|
¥139.2951
|
|
|
¥139.216
|
|
|
¥130.0291
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
¥169.6469
-
667库存量
-
600在途量
-
新产品
|
Mouser 零件编号
511-SCT020HU120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
667库存量
600在途量
|
|
|
¥169.6469
|
|
|
¥140.6172
|
|
|
¥121.588
|
|
|
¥112.9096
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
¥104.7962
-
1,071库存量
-
新产品
|
Mouser 零件编号
511-SCT027H65G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
1,071库存量
|
|
|
¥104.7962
|
|
|
¥73.45
|
|
|
¥63.8563
|
|
|
¥59.6414
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
- SCT040HU120G3AG
- STMicroelectronics
-
1:
¥111.7457
-
653库存量
-
新产品
|
Mouser 零件编号
511-SCT040HU120G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
|
|
653库存量
|
|
|
¥111.7457
|
|
|
¥78.2525
|
|
|
¥68.9865
|
|
|
¥67.6644
|
|
|
¥64.4326
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
¥70.5572
-
1,764库存量
-
1,799在途量
-
新产品
|
Mouser 零件编号
511-SCT055TO65G3
新产品
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,764库存量
1,799在途量
|
|
|
¥70.5572
|
|
|
¥48.3866
|
|
|
¥42.6801
|
|
|
¥38.7929
|
|
|
¥35.482
|
|
|
¥35.482
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
- SCT011HU75G3AG
- STMicroelectronics
-
1:
¥206.8691
-
118库存量
-
新产品
|
Mouser 零件编号
511-SCT011HU75G3AG
新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
|
|
118库存量
|
|
|
¥206.8691
|
|
|
¥152.0302
|
|
|
¥151.9511
|
|
|
¥141.9393
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
750 V
|
110 A
|
15 mOhms
|
- 10 V, + 22 V
|
3.2 V
|
154 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
¥79.0774
-
37库存量
-
新产品
|
Mouser 零件编号
511-SCT040TO65G3
新产品
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37库存量
|
|
|
¥79.0774
|
|
|
¥59.7205
|
|
|
¥44.3412
|
|
|
¥41.358
|
|
|
¥41.358
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
42.5 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
¥169.9859
-
139库存量
|
Mouser 零件编号
511-SCT012H90G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
139库存量
|
|
|
¥169.9859
|
|
|
¥122.0852
|
|
|
¥118.6161
|
|
|
¥110.7513
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
12 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
138 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
¥128.0403
-
175库存量
|
Mouser 零件编号
511-SCT018H65G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
175库存量
|
|
|
¥128.0403
|
|
|
¥90.4113
|
|
|
¥87.0213
|
|
|
¥82.3883
|
|
|
¥76.9304
|
|
最低： 1
倍数： 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
¥129.2042
-
532库存量
|
Mouser 零件编号
511-SCT018W65G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532库存量
|
|
|
¥129.2042
|
|
|
¥91.2362
|
|
|
¥77.7553
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
¥156.3355
-
513库存量
-
Mouser 的新产品
|
Mouser 零件编号
511-SCT020W120G3-4AG
Mouser 的新产品
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
513库存量
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
¥159.895
-
587库存量
|
Mouser 零件编号
511-SCT025W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
587库存量
|
|
|
¥159.895
|
|
|
¥106.8641
|
|
|
¥98.4343
|
|
|
¥92.0611
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
¥149.4651
-
471库存量
-
Mouser 的新产品
|
Mouser 零件编号
511-SCT025W120G3AG
Mouser 的新产品
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STMicroelectronics
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碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
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471库存量
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¥149.4651
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¥109.3501
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¥96.0387
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报价
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报价
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最低： 1
倍数： 1
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Through Hole
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HiP247-3
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N-Channel
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1 Channel
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1.2 kV
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56 A
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37 mOhms
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- 10 V, + 22 V
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3 V
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73 nC
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- 55 C
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+ 200 C
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388 W
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Enhancement
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AEC-Q101
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碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
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1:
¥134.6621
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338库存量
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Mouser 零件编号
511-SCT027W65G3-4AG
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STMicroelectronics
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碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
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338库存量
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最低： 1
倍数： 1
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Through Hole
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HiP-247-4
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N-Channel
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1 Channel
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650 V
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60 A
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29 mOhms
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- 18 V, + 18 V
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4.2 V
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51 nC
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- 55 C
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+ 200 C
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313 W
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Enhancement
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AEC-Q100
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碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
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1:
¥108.7738
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670库存量
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Mouser 零件编号
511-SCT040W120G3-4AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
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670库存量
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¥108.7738
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¥76.0151
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¥62.2065
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最低： 1
倍数： 1
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Through Hole
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HiP-247-4
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N-Channel
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1 Channel
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1.2 kV
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40 A
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54 mOhms
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- 18 V, + 18 V
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4.2 V
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56 nC
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- 55 C
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+ 200 C
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312 W
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Enhancement
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AEC-Q100
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碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
¥107.9489
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584库存量
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Mouser 零件编号
511-SCT040W120G3AG
|
STMicroelectronics
|
碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
584库存量
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¥107.9489
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¥75.4388
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¥61.6189
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最低： 1
倍数： 1
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Through Hole
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HiP-247-3
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N-Channel
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1 Channel
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1.2 kV
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40 A
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54 mOhms
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- 18 V, + 18 V
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4.2 V
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56 nC
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- 55 C
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+ 200 C
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312 W
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Enhancement
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AEC-Q101
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碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
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1:
¥87.5185
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537库存量
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600在途量
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Mouser 的新产品
|
Mouser 零件编号
511-SCT040W65G3-4
Mouser 的新产品
|
STMicroelectronics
|
碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
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|
537库存量
600在途量
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¥87.5185
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¥53.5959
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¥50.9517
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¥48.5561
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最低： 1
倍数： 1
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Through Hole
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HiP247-4
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N-Channel
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1 Channel
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650 V
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30 A
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63 mOhms
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- 10 V, + 22 V
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3 V
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37.5 nC
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- 55 C
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+ 200 C
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240 W
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Enhancement
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