碳化硅MOSFET

 碳化硅MOSFET
SiC MOSFETs are available at Mouser Electronics from industry leading manufacturers. Mouser is an authorized distributor for many SiC MOSFET manufacturers including Infineon, Microchip, Navitas Semiconductor, onsemi, ROHM Semiconductor, STMicroelectronics, Wolfspeed & more. Please view our large selection of SiC MOSFETs below.
结果: 1,298
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名


Diodes Incorporated 碳化硅MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS 50库存量
最低: 1
倍数: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement
APC-E 碳化硅MOSFET 1700V 1000mR, TO247-3L, Industrial Grade 300库存量
300在途量
最低: 1
倍数: 1

Through Hole TO-247-3 1.7 kV 6.8 A 1 kOhms 20 V + 175 C
Wolfspeed 碳化硅MOSFET SiC, MOSFET, 21mO, 1200V, TO-263-7 XL T&R, Industrial 212库存量
最低: 1
倍数: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 248 A 35 mOhms - 8 V, + 19 V 3.8 V 169 nC - 40 C + 175 C 500 W Enhancement


Coherent 碳化硅MOSFET 1200V SIC Mosfet 20mOHm 200C Temp TO247-4 AEC-Q101 139库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 115 A 24.3 mOhms - 20 V, + 20 V 2.8 V 172 nC - 55 C + 200 C 660 W Enhancement
onsemi 碳化硅MOSFET 1200V/53MOSICFETG4TO24 609库存量
600在途量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 34 A 67 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 263 W SiC FET
onsemi 碳化硅MOSFET 1200V/400MOSICFETG3TO263-7 1,920库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 5.9 A 410 mOhms - 25 V, + 25 V 6 V 22.5 nC - 55 C + 175 C 100 W Enhancement SiC FET
ROHM Semiconductor 碳化硅MOSFET TO263 1.2KV 75A N-CH SIC 1,145库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 75 A 23.4 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 267 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 26A N-CH SIC 499库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
onsemi 碳化硅MOSFET SIC MOS TO247-4L 650V 425库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 40MOHM 1200V 978库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 357 W Enhancement EliteSiC

onsemi 碳化硅MOSFET 20MW 1200V 937库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement AEC-Q101 EliteSiC
onsemi 碳化硅MOSFET 750V/33MOSICFETG4TO263-7 486库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 44 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 197 W Enhancement SiC FET
Infineon Technologies 碳化硅MOSFET SIC_DISCRETE 1,346库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 27 A 80 mOhms - 20 V, + 20 V 4.5 V - 55 C + 175 C 714 W Enhancement CoolSiC
ROHM Semiconductor 碳化硅MOSFET TO263 750V 51A N-CH SIC 2,010库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO263 750V 51A N-CH SIC 2,008库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 750V 34A N-CH SIC 810库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement

onsemi 碳化硅MOSFET SIC MOS TO247-4L 650V 422库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC
onsemi 碳化硅MOSFET 1200V/70MOSICFETG4TO24 663库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 27.5 A 91 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 217 W SiC FET
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 81A N-CH SIC 520库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 81 A 23.4 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 26A N-CH SIC 583库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET, 45mO, 650V, TOLL, T&R, Industrial 1,816库存量
最低: 1
倍数: 1
: 2,000

SMD/SMT TOLL-9 N-Channel 1 Channel 650 V 49 A 60 mOhms - 8 V, + 19 V 3.6 V 59 nC - 40 C + 175 C 164 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 43A N-CH SIC 671库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
Toshiba 碳化硅MOSFET G3 1200V SiC-MOSFET TO-247 45mohm 111库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 40 A 182 mOhms - 10 V, + 25 V 5 V 57 nC - 55 C + 175 C 182 W Enhancement

onsemi 碳化硅MOSFET SIC MOS TO247-3L 650V 649库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 38 A 85 mOhms - 8 V, + 22 V 4.3 V 61 nC - 55 C + 175 C 148 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 650V 1,285库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 106 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 395 W Enhancement EliteSiC