碳化硅MOSFET

 碳化硅MOSFET
SiC MOSFETs are available at Mouser Electronics from industry leading manufacturers. Mouser is an authorized distributor for many SiC MOSFET manufacturers including Infineon, Microchip, Navitas Semiconductor, onsemi, ROHM Semiconductor, STMicroelectronics, Wolfspeed & more. Please view our large selection of SiC MOSFETs below.
结果: 1,298
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名
STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H 549库存量
最低: 1
倍数: 1

Through Hole HiP-247-3 N-Channel 1 Channel 1.2 kV 36 A 100 mOhms - 10 V, + 22 V 4.9 V 61 nC - 55 C + 200 C 278 W Enhancement AEC-Q101
STMicroelectronics 碳化硅MOSFET Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package 714库存量
最低: 1
倍数: 1

Through Hole HiP-247-3 N-Channel 1 Channel 1.2 kV 91 A 21 mOhms - 10 V, + 22 V 4.9 V 150 nC - 55 C + 200 C 547 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 1200V 72A 339W SIC 30mOhm TO-247N 352库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET Transistor SiC MOSFET 650V 120m 3rd Gen TO-263-7L 2,763库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 100 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 26A N-CH SIC 811库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
onsemi 碳化硅MOSFET SIC MOS 60MOHM 900V 1,276库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 900 V 44 A 84 mOhms - 8 V, + 22 V 4.3 V 88 nC - 55 C + 175 C 211 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-4L 80MOHM 1 253库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 29 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 80MOHM 1200V 1,971库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement AEC-Q101 EliteSiC
onsemi 碳化硅MOSFET 1200V/80MOSICFETG3TO263-7 722库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi 碳化硅MOSFET 750V/18MOSICFETG4TO247-4 638库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 750V/23MOSICFETG4TO247 593库存量
最低: 1
倍数: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
STMicroelectronics 碳化硅MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac 1,597库存量
最低: 1
倍数: 1
: 3,000

SMD/SMT PowerFLAT-5 N-Channel 1 Channel 650 V 40 A 18 mOhms - 10 V, + 22 V 5 V 157 nC - 55 C + 175 C 935 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 650V 118A 427W SIC 17mOhm TO-247N 360库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
onsemi 碳化硅MOSFET SIC MOS D2PAK-7L 160MOHM 1200V 2,050库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-4L 1200V 16 2,153库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC
Wolfspeed 碳化硅MOSFET 650V MOSFET 45mOHMS SiC MOSFET 2,414库存量
2,250在途量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 49 A 45 mOhms - 8 V, + 19 V 3.6 V 63 nC - 40 C + 175 C 176 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET, 75mO, 1200V, TO-247-4, 175C capable, Industrial 752库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 32 A 90 mOhms - 8 V, + 19 V 3.6 V 53 nC - 40 C + 175 C 136 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET, 160mO, 1200V, TO-263-7, Industrial 1,004库存量
最低: 1
倍数: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 8 V, + 19 V 3.6 V 24 nC - 55 C + 150 C 90 W Enhancement
onsemi 碳化硅MOSFET SIC MOS TOLL 650V 1,374库存量
最低: 1
倍数: 1
: 2,000

SMD/SMT PSOF-8 N-Channel 1 Channel 650 V 73 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 348 W Enhancement EliteSiC
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 43A N-CH SIC 115库存量
最低: 1
倍数: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO263 750V 31A N-CH SIC 301库存量
最低: 1
倍数: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement AEC-Q101
onsemi 碳化硅MOSFET 750V/23MOSICFETG4TO263-7 787库存量
最低: 1
倍数: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 64 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 278 W Enhancement SiC FET
ROHM Semiconductor 碳化硅MOSFET TO247 750V 56A N-CH SIC 804库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
GeneSiC Semiconductor 碳化硅MOSFET 1200V 12mohm TO-247-4 G3R SiC MOSFET 1,764库存量
最低: 1
倍数: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 111 A 12 mOhms - 10 V, + 22 V 2.7 V 288 nC - 55 C + 175 C 567 W Enhancement
onsemi 碳化硅MOSFET 650V/30MOSICFETG3TO220 902库存量
最低: 1
倍数: 1

Through Hole TO-220-3 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET